Abstract
The detailed defects and interface in the ZnO films on (1 1 2̄ 0) a-plane of sapphire have been characterized using transmission electron microscopy. The single crystal ZnO films are grown by electron cyclotron resonance-assisted molecular beam epitaxy. The orientation relationship between ZnO films and sapphire is (0 0 0 1)ZnO∥(1 1 2̄ 0)sapphire and [2 1̄ 1̄ 0]ZnO∥[0 0 0 1]sapphire. A majority of the threading dislocations was found to be screw or mixed. When the interfaces are observed in [0 0 0 1]sapphire direction, the interfaces appear structurally semicoherent with a comparative regular array of misfit dislocations at an interface accommodating a mismatch of about 2.45%. Good matches between simulated and experimental images of the ZnO/a-plane sapphire were obtained. The structural model for the atomic arrangements of the interface was proposed.
Original language | English |
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Pages (from-to) | 202-207 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 225 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2001 May |
Keywords
- A1. Characterization
- A1. Defects
- A1. Interfaces
- A3. Molecular beam epitaxy
- B1. Oxides
- B2. Semiconducting II-VI materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry