Study of defects and interfaces in epitaxial ZnO films on (1 1 2̄ 0) Al2O3 grown by electron cyclotron resonance-assisted molecular beam epitaxy

S. H. Lim, D. Shindo, H. B. Kang, K. Nakamura

    Research output: Contribution to journalArticlepeer-review

    26 Citations (Scopus)

    Abstract

    The detailed defects and interface in the ZnO films on (1 1 2̄ 0) a-plane of sapphire have been characterized using transmission electron microscopy. The single crystal ZnO films are grown by electron cyclotron resonance-assisted molecular beam epitaxy. The orientation relationship between ZnO films and sapphire is (0 0 0 1)ZnO∥(1 1 2̄ 0)sapphire and [2 1̄ 1̄ 0]ZnO∥[0 0 0 1]sapphire. A majority of the threading dislocations was found to be screw or mixed. When the interfaces are observed in [0 0 0 1]sapphire direction, the interfaces appear structurally semicoherent with a comparative regular array of misfit dislocations at an interface accommodating a mismatch of about 2.45%. Good matches between simulated and experimental images of the ZnO/a-plane sapphire were obtained. The structural model for the atomic arrangements of the interface was proposed.

    Original languageEnglish
    Pages (from-to)202-207
    Number of pages6
    JournalJournal of Crystal Growth
    Volume225
    Issue number2-4
    DOIs
    Publication statusPublished - 2001 May

    Keywords

    • A1. Characterization
    • A1. Defects
    • A1. Interfaces
    • A3. Molecular beam epitaxy
    • B1. Oxides
    • B2. Semiconducting II-VI materials

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'Study of defects and interfaces in epitaxial ZnO films on (1 1 2̄ 0) Al2O3 grown by electron cyclotron resonance-assisted molecular beam epitaxy'. Together they form a unique fingerprint.

    Cite this