Study of defects and interfaces in epitaxial ZnO films on (1 1 2̄ 0) Al2O3 grown by electron cyclotron resonance-assisted molecular beam epitaxy

S. H. Lim, Daisuke Shindo, H. B. Kang, K. Nakamura

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The detailed defects and interface in the ZnO films on (1 1 2̄ 0) a-plane of sapphire have been characterized using transmission electron microscopy. The single crystal ZnO films are grown by electron cyclotron resonance-assisted molecular beam epitaxy. The orientation relationship between ZnO films and sapphire is (0 0 0 1)ZnO∥(1 1 2̄ 0)sapphire and [2 1̄ 1̄ 0]ZnO∥[0 0 0 1]sapphire. A majority of the threading dislocations was found to be screw or mixed. When the interfaces are observed in [0 0 0 1]sapphire direction, the interfaces appear structurally semicoherent with a comparative regular array of misfit dislocations at an interface accommodating a mismatch of about 2.45%. Good matches between simulated and experimental images of the ZnO/a-plane sapphire were obtained. The structural model for the atomic arrangements of the interface was proposed.

Original languageEnglish
Pages (from-to)202-207
Number of pages6
JournalJournal of Crystal Growth
Volume225
Issue number2-4
DOIs
Publication statusPublished - 2001 May 1

Keywords

  • A1. Characterization
  • A1. Defects
  • A1. Interfaces
  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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