Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

R. Pierobon; F. Rampazzo; F. Clonfero; T. De Pellegrin; M. Bertazzo; G. Meneghesso; E. Zanoni; T. Suemitsu; T. Enoki

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

R. Pierobon, F. Rampazzo, F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y ₂₂ at low frequencies.

Original language	English
Article number	ThA2-4
Pages (from-to)	623-626
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 2004 May 31 → 2004 Jun 4

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm. / Pierobon, R.; Rampazzo, F.; Clonfero, F.; De Pellegrin, T.; Bertazzo, M.; Meneghesso, G.; Zanoni, E.; Suemitsu, T.; Enoki, T.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.12.2004, p. 623-626.

Research output: Contribution to journal › Conference article › peer-review

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title = "Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm",

abstract = "In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y 22 at low frequencies.",

author = "R. Pierobon and F. Rampazzo and F. Clonfero and {De Pellegrin}, T. and M. Bertazzo and G. Meneghesso and E. Zanoni and T. Suemitsu and T. Enoki",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "623--626",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

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TY - JOUR

T1 - Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

AU - Pierobon, R.

AU - Rampazzo, F.

AU - Clonfero, F.

AU - De Pellegrin, T.

AU - Bertazzo, M.

AU - Meneghesso, G.

AU - Zanoni, E.

AU - Suemitsu, T.

AU - Enoki, T.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y 22 at low frequencies.

AB - In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y 22 at low frequencies.

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UR - http://www.scopus.com/inward/citedby.url?scp=23744469438&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23744469438

SP - 623

EP - 626

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

M1 - ThA2-4

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

Abstract

ASJC Scopus subject areas

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