Abstract
In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y 22 at low frequencies.
Original language | English |
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Article number | ThA2-4 |
Pages (from-to) | 623-626 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
Publication status | Published - 2004 Dec 1 |
Externally published | Yes |
Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 2004 May 31 → 2004 Jun 4 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering