Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

R. Pierobon, F. Rampazzo, F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y 22 at low frequencies.

Original languageEnglish
Article numberThA2-4
Pages (from-to)623-626
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 2004 Dec 1
Externally publishedYes
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 2004 May 312004 Jun 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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