STUDIES OF Si/SiO//2 INTERFACES AND SiO//2 BY XPS.

Takeo Hattori; Tatsushi Nishina

STUDIES OF Si/SiO//2 INTERFACES AND SiO//2 BY XPS.

Takeo Hattori, Tatsushi Nishina

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The method to determine thickness distribution in thin films by using X-ray excited photoelectron spectroscopy has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of Si-SiO//2 interfacial transition layer. Thickness distribution functions and the thickness of the interfacial layer are determined for silicon oxide films made by wet and dry oxidations.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	Pergamon Press
Pages	379-383
Number of pages	5
Publication status	Published - 1978
Event	Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces - Yorktown Heights, NY, USA Duration: 1978 Mar 22 → 1978 Mar 24

Other

Other	Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces
City	Yorktown Heights, NY, USA
Period	78/3/22 → 78/3/24

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "STUDIES OF Si/SiO//2 INTERFACES AND SiO//2 BY XPS.",

abstract = "The method to determine thickness distribution in thin films by using X-ray excited photoelectron spectroscopy has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of Si-SiO//2 interfacial transition layer. Thickness distribution functions and the thickness of the interfacial layer are determined for silicon oxide films made by wet and dry oxidations.",

author = "Takeo Hattori and Tatsushi Nishina",

year = "1978",

language = "English",

pages = "379--383",

booktitle = "Unknown Host Publication Title",

publisher = "Pergamon Press",

note = "Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces ; Conference date: 22-03-1978 Through 24-03-1978",

}

TY - CHAP

T1 - STUDIES OF Si/SiO//2 INTERFACES AND SiO//2 BY XPS.

AU - Hattori, Takeo

AU - Nishina, Tatsushi

PY - 1978

Y1 - 1978

N2 - The method to determine thickness distribution in thin films by using X-ray excited photoelectron spectroscopy has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of Si-SiO//2 interfacial transition layer. Thickness distribution functions and the thickness of the interfacial layer are determined for silicon oxide films made by wet and dry oxidations.

AB - The method to determine thickness distribution in thin films by using X-ray excited photoelectron spectroscopy has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of Si-SiO//2 interfacial transition layer. Thickness distribution functions and the thickness of the interfacial layer are determined for silicon oxide films made by wet and dry oxidations.

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UR - http://www.scopus.com/inward/citedby.url?scp=0018108450&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0018108450

SP - 379

EP - 383

BT - Unknown Host Publication Title

PB - Pergamon Press

T2 - Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces

Y2 - 22 March 1978 through 24 March 1978

ER -

STUDIES OF Si/SiO//2 INTERFACES AND SiO//2 BY XPS.

Abstract

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ASJC Scopus subject areas

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