STUDIES OF Si/SiO//2 INTERFACES AND SiO//2 BY XPS.

Takeo Hattori, Tatsushi Nishina

    Research output: Chapter in Book/Report/Conference proceedingChapter

    3 Citations (Scopus)

    Abstract

    The method to determine thickness distribution in thin films by using X-ray excited photoelectron spectroscopy has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of Si-SiO//2 interfacial transition layer. Thickness distribution functions and the thickness of the interfacial layer are determined for silicon oxide films made by wet and dry oxidations.

    Original languageEnglish
    Title of host publicationUnknown Host Publication Title
    PublisherPergamon Press
    Pages379-383
    Number of pages5
    Publication statusPublished - 1978
    EventProc of the Int Top Conf on the Phys of SiO2 on its Interfaces - Yorktown Heights, NY, USA
    Duration: 1978 Mar 221978 Mar 24

    Other

    OtherProc of the Int Top Conf on the Phys of SiO2 on its Interfaces
    CityYorktown Heights, NY, USA
    Period78/3/2278/3/24

    ASJC Scopus subject areas

    • Engineering(all)

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