Abstract
The method to determine thickness distribution in thin films by using X-ray excited photoelectron spectroscopy has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of Si-SiO//2 interfacial transition layer. Thickness distribution functions and the thickness of the interfacial layer are determined for silicon oxide films made by wet and dry oxidations.
Original language | English |
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Title of host publication | Unknown Host Publication Title |
Publisher | Pergamon Press |
Pages | 379-383 |
Number of pages | 5 |
Publication status | Published - 1978 |
Event | Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces - Yorktown Heights, NY, USA Duration: 1978 Mar 22 → 1978 Mar 24 |
Other
Other | Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces |
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City | Yorktown Heights, NY, USA |
Period | 78/3/22 → 78/3/24 |
ASJC Scopus subject areas
- Engineering(all)