Studies of SiO2 and SiSiO2 interfaces by XPS

Takeo Hattori; Tatsushi Nishina

doi:10.1016/0039-6028(79)90434-5

Studies of SiO₂ and SiSiO₂ interfaces by XPS

Takeo Hattori, Tatsushi Nishina

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The method to determine thickness distribution in thin films by X-ray photoelectron spectroscopy (XPS) has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of the SiSiO₂ interfacial transition layer. The simple method to determine the thickness of the interfacial layer is given. The thickness of the interfacial layer determined by this method is approximately 10 Å.

Original language	English
Pages (from-to)	555-561
Number of pages	7
Journal	Surface Science
Volume	86
Issue number	C
DOIs	https://doi.org/10.1016/0039-6028(79)90434-5
Publication status	Published - 1979 Jul 2

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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abstract = "The method to determine thickness distribution in thin films by X-ray photoelectron spectroscopy (XPS) has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of the SiSiO2 interfacial transition layer. The simple method to determine the thickness of the interfacial layer is given. The thickness of the interfacial layer determined by this method is approximately 10 {\AA}.",

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