Studies of SiO2 and SiSiO2 interfaces by XPS

Takeo Hattori, Tatsushi Nishina

    Research output: Contribution to journalArticlepeer-review

    29 Citations (Scopus)

    Abstract

    The method to determine thickness distribution in thin films by X-ray photoelectron spectroscopy (XPS) has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of the SiSiO2 interfacial transition layer. The simple method to determine the thickness of the interfacial layer is given. The thickness of the interfacial layer determined by this method is approximately 10 Å.

    Original languageEnglish
    Pages (from-to)555-561
    Number of pages7
    JournalSurface Science
    Volume86
    Issue numberC
    DOIs
    Publication statusPublished - 1979 Jul 2

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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