Abstract
The method to determine thickness distribution in thin films by X-ray photoelectron spectroscopy (XPS) has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of the SiSiO2 interfacial transition layer. The simple method to determine the thickness of the interfacial layer is given. The thickness of the interfacial layer determined by this method is approximately 10 Å.
Original language | English |
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Pages (from-to) | 555-561 |
Number of pages | 7 |
Journal | Surface Science |
Volume | 86 |
Issue number | C |
DOIs | |
Publication status | Published - 1979 Jul 2 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry