STT-MRAM for low power systems

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
Publication statusPublished - 2015 Jun 3
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan, Province of China
Duration: 2015 Apr 272015 Apr 29

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Other

Other2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period15/4/2715/4/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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