TY - GEN
T1 - STT-MRAM for low power systems
AU - Endoh, Tetsuo
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/6/3
Y1 - 2015/6/3
N2 - Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.
AB - Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.
UR - http://www.scopus.com/inward/record.url?scp=84940735218&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940735218&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2015.7117581
DO - 10.1109/VLSI-TSA.2015.7117581
M3 - Conference contribution
AN - SCOPUS:84940735218
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
BT - 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Y2 - 27 April 2015 through 29 April 2015
ER -