STT-MRAM for low power systems

Tetsuo Endoh

doi:10.1109/VLSI-TSA.2015.7117581

STT-MRAM for low power systems

Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

Original language	English
Title of host publication	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973750
DOIs	https://doi.org/10.1109/VLSI-TSA.2015.7117581
Publication status	Published - 2015 Jun 3
Event	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan, Province of China Duration: 2015 Apr 27 → 2015 Apr 29

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume	2015-June
ISSN (Print)	1930-8868

Other

Other	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	15/4/27 → 15/4/29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VLSI-TSA.2015.7117581

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STT-MRAM for low power systems. / Endoh, Tetsuo.

2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7117581 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endoh, T 2015, STT-MRAM for low power systems. in 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015., 7117581, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015, Hsinchu, Taiwan, Province of China, 15/4/27. https://doi.org/10.1109/VLSI-TSA.2015.7117581

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abstract = "Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.",

author = "Tetsuo Endoh",

year = "2015",

month = jun,

day = "3",

doi = "10.1109/VLSI-TSA.2015.7117581",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015",

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T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015

Y2 - 27 April 2015 through 29 April 2015

ER -

STT-MRAM for low power systems

Abstract

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ASJC Scopus subject areas

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