STT-MRAM and NV-Logic for low power systems

Tetsuo Endoh

doi:10.1109/E3S.2013.6705864

STT-MRAM and NV-Logic for low power systems

Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

Original language	English
Title of host publication	2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings
DOIs	https://doi.org/10.1109/E3S.2013.6705864
Publication status	Published - 2013 Dec 1
Event	2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Berkeley, CA, United States Duration: 2013 Oct 28 → 2013 Oct 29

Publication series

Name	2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings

Other

Other	2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013
Country/Territory	United States
City	Berkeley, CA
Period	13/10/28 → 13/10/29

ASJC Scopus subject areas

Energy Engineering and Power Technology
Fuel Technology

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10.1109/E3S.2013.6705864

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Endoh, T 2013, STT-MRAM and NV-Logic for low power systems. in 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings., 6705864, 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings, 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013, Berkeley, CA, United States, 13/10/28. https://doi.org/10.1109/E3S.2013.6705864

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title = "STT-MRAM and NV-Logic for low power systems",

abstract = "Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.",

author = "Tetsuo Endoh",

year = "2013",

month = dec,

day = "1",

doi = "10.1109/E3S.2013.6705864",

language = "English",

isbn = "9781479933723",

series = "2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings",

booktitle = "2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings",

note = "2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 ; Conference date: 28-10-2013 Through 29-10-2013",

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AU - Endoh, Tetsuo

PY - 2013/12/1

Y1 - 2013/12/1

N2 - Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

AB - Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

UR - http://www.scopus.com/inward/record.url?scp=84893649906&partnerID=8YFLogxK

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U2 - 10.1109/E3S.2013.6705864

DO - 10.1109/E3S.2013.6705864

M3 - Conference contribution

AN - SCOPUS:84893649906

SN - 9781479933723

T3 - 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings

BT - 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013 - Proceedings

T2 - 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2013

Y2 - 28 October 2013 through 29 October 2013

ER -

STT-MRAM and NV-Logic for low power systems

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