Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface

Qikun Xue, T. Hashizume, J. M. Zhou, T. Sakata, T. Ohno, T. Sakurai

    Research output: Contribution to journalArticle

    186 Citations (Scopus)

    Abstract

    Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase.

    Original languageEnglish
    Pages (from-to)3177-3180
    Number of pages4
    JournalPhysical Review Letters
    Volume74
    Issue number16
    DOIs
    Publication statusPublished - 1995 Jan 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Xue, Q., Hashizume, T., Zhou, J. M., Sakata, T., Ohno, T., & Sakurai, T. (1995). Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface. Physical Review Letters, 74(16), 3177-3180. https://doi.org/10.1103/PhysRevLett.74.3177