Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface

Qikun Xue, T. Hashizume, J. M. Zhou, T. Sakata, T. Ohno, T. Sakurai

Research output: Contribution to journalArticlepeer-review

192 Citations (Scopus)

Abstract

Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase.

Original languageEnglish
Pages (from-to)3177-3180
Number of pages4
JournalPhysical review letters
Volume74
Issue number16
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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