TY - JOUR
T1 - Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface
AU - Xue, Qikun
AU - Hashizume, T.
AU - Zhou, J. M.
AU - Sakata, T.
AU - Ohno, T.
AU - Sakurai, T.
PY - 1995
Y1 - 1995
N2 - Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase.
AB - Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase.
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U2 - 10.1103/PhysRevLett.74.3177
DO - 10.1103/PhysRevLett.74.3177
M3 - Article
AN - SCOPUS:3342917819
VL - 74
SP - 3177
EP - 3180
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 16
ER -