Abstract
Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase.
| Original language | English |
|---|---|
| Pages (from-to) | 3177-3180 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 74 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1995 Jan 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Xue, Q., Hashizume, T., Zhou, J. M., Sakata, T., Ohno, T., & Sakurai, T. (1995). Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface. Physical Review Letters, 74(16), 3177-3180. https://doi.org/10.1103/PhysRevLett.74.3177