Structures of As-rich GaAs(001)-(2 × 4) reconstructions

Tomihiro Hashizume, Q. K. Xue, J. Zhou, A. Ichimiya, T. Sakurai

    Research output: Contribution to journalArticle

    275 Citations (Scopus)

    Abstract

    Scanning tunneling microscope (STM) images together with reflection high-energy electron diffraction (RHEED) showed for the first time convincingly that the molecular-beam epitaxially grown GaAs(001)-(2 × 4), and phases all have the same outermost surface layer of the unit cell, which consists of two As dimers and two dimer vacancies. Based on the STM and RHEED observations and dynamical RHEED calculation, a structure model consistent with various observations is proposed.

    Original languageEnglish
    Pages (from-to)2208-2211
    Number of pages4
    JournalPhysical Review Letters
    Volume73
    Issue number16
    DOIs
    Publication statusPublished - 1994 Jan 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Structures of As-rich GaAs(001)-(2 × 4) reconstructions'. Together they form a unique fingerprint.

    Cite this