Structures and optical properties of indium doped SrTiO3 thin films by oxygen plasma-assisted pulsed laser deposition

Iun Zuan, Xiaomin Li, Weidong Yu, Xiangdong Gao, Feng Wu, Jinfang Kong, Wenzhong Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Undoped and In-doped SrInxTi1-xO3(x=0, 0.1, 0.2) films have been deposited on Si(100) and quartz substrates by oxygen plasma-assisted pulsed laser deposition (PLD). Effects of indium doping on the crystallinity and the optical energy band gap of SrTiO3 (STO) films were investigated. Results indicate that undoped STO film is of rather good crystallinity and low defects concentration. However indium doping deteriorates the crystallinity of the STO film, and results in the roughening of the film surface. Moreover the a-axis length monotonically increases when increasing In content. For all the films, the average transmission in the visible wavelength region (λ=400-800nm) is over 75%. The optical energy band gap of STO thin films, measured from transmittance spectra, changes from 3.67eV to 3.93eV by indium doping.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
DOIs
Publication statusPublished - 2008 Apr 21
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: 2007 Sep 252007 Sep 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6984
ISSN (Print)0277-786X

Other

Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
CountryChina
CityShanghai
Period07/9/2507/9/28

Keywords

  • Crystallinity
  • Optical property
  • Pulsed laser deposition
  • Seed layer
  • SrTiO film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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