Abstract
Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckling and the Sb-trimer structure. The former is characterized by a complete charge transfer from the In-atom of the outermost surface to the Sb atom of the second layer, whereas in the latter case an incomplete charge transfer is dominant. The incomplete charge transfer from the Sb-trimer to the rest-Sb atom is caused by a large deformation of the orbital configuration inherent to the rest-Sb atom.
| Original language | English |
|---|---|
| Pages (from-to) | 343-349 |
| Number of pages | 7 |
| Journal | Surface Science |
| Volume | 514 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2002 Aug 10 |
Keywords
- Indium antimonide
- Scanning tunneling microscopy
- Surface electronic phenomena (work function, surface potential, surface states, etc.)
- Surface structure, morphology, roughness, and topography
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Cite this
Eguchi, T., Miura, T., Cho, S. P., Kadohira, T., Naruse, N., & Osaka, T. (2002). Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces. Surface Science, 514(1-3), 343-349. https://doi.org/10.1016/S0039-6028(02)01651-5