Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces

Toyoaki Eguchi; Taneaki Miura; Sung Pyo Cho; Takuya Kadohira; Nobuyasu Naruse; Toshiaki Osaka

doi:10.1016/S0039-6028(02)01651-5

Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces

Toyoaki Eguchi, Taneaki Miura, Sung Pyo Cho, Takuya Kadohira, Nobuyasu Naruse, Toshiaki Osaka

SCI - Physics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckling and the Sb-trimer structure. The former is characterized by a complete charge transfer from the In-atom of the outermost surface to the Sb atom of the second layer, whereas in the latter case an incomplete charge transfer is dominant. The incomplete charge transfer from the Sb-trimer to the rest-Sb atom is caused by a large deformation of the orbital configuration inherent to the rest-Sb atom.

Original language	English
Pages (from-to)	343-349
Number of pages	7
Journal	Surface Science
Volume	514
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(02)01651-5
Publication status	Published - 2002 Aug 10

Keywords

Indium antimonide
Scanning tunneling microscopy
Surface electronic phenomena (work function, surface potential, surface states, etc.)
Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0039-6028(02)01651-5

Fingerprint Dive into the research topics of 'Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces'. Together they form a unique fingerprint.

Cite this

@article{98fb868c43884db085723a0c4f6e5289,

title = "Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces",

abstract = "Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckling and the Sb-trimer structure. The former is characterized by a complete charge transfer from the In-atom of the outermost surface to the Sb atom of the second layer, whereas in the latter case an incomplete charge transfer is dominant. The incomplete charge transfer from the Sb-trimer to the rest-Sb atom is caused by a large deformation of the orbital configuration inherent to the rest-Sb atom.",

keywords = "Indium antimonide, Scanning tunneling microscopy, Surface electronic phenomena (work function, surface potential, surface states, etc.), Surface structure, morphology, roughness, and topography",

author = "Toyoaki Eguchi and Taneaki Miura and Cho, {Sung Pyo} and Takuya Kadohira and Nobuyasu Naruse and Toshiaki Osaka",

note = "Funding Information: We would like to acknowledge fruitful discussion with Dr. Jun Nakamura throughout this work. This work was partially supported by a grant-in-aid for Scientific Research (B) from the Ministry of Education, Science, Sports and Culture and by a grant-in-aid for Research for the Future (Next-Generation Process Technologies—Wafer-scale fabrication processes of nano dots) from the Japan Society for the Promotion of Science and by grant for the promotion of the advancement of education and research in graduate schools (Morphology control of nanostructures by means of nanoscale surface modification of solids) and by a Waseda University Grant for Special Research Projects.",

year = "2002",

month = aug,

day = "10",

doi = "10.1016/S0039-6028(02)01651-5",

language = "English",

volume = "514",

pages = "343--349",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces

AU - Eguchi, Toyoaki

AU - Miura, Taneaki

AU - Cho, Sung Pyo

AU - Kadohira, Takuya

AU - Naruse, Nobuyasu

AU - Osaka, Toshiaki

N1 - Funding Information: We would like to acknowledge fruitful discussion with Dr. Jun Nakamura throughout this work. This work was partially supported by a grant-in-aid for Scientific Research (B) from the Ministry of Education, Science, Sports and Culture and by a grant-in-aid for Research for the Future (Next-Generation Process Technologies—Wafer-scale fabrication processes of nano dots) from the Japan Society for the Promotion of Science and by grant for the promotion of the advancement of education and research in graduate schools (Morphology control of nanostructures by means of nanoscale surface modification of solids) and by a Waseda University Grant for Special Research Projects.

PY - 2002/8/10

Y1 - 2002/8/10

N2 - Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckling and the Sb-trimer structure. The former is characterized by a complete charge transfer from the In-atom of the outermost surface to the Sb atom of the second layer, whereas in the latter case an incomplete charge transfer is dominant. The incomplete charge transfer from the Sb-trimer to the rest-Sb atom is caused by a large deformation of the orbital configuration inherent to the rest-Sb atom.

AB - Scanning tunneling microscopy (STM) has been used to study surface structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces. High-resolution STM images taken at various sample bias voltages for these two surfaces teach us the origin of the electronic states eigen to the In-vacancy buckling and the Sb-trimer structure. The former is characterized by a complete charge transfer from the In-atom of the outermost surface to the Sb atom of the second layer, whereas in the latter case an incomplete charge transfer is dominant. The incomplete charge transfer from the Sb-trimer to the rest-Sb atom is caused by a large deformation of the orbital configuration inherent to the rest-Sb atom.

KW - Indium antimonide

KW - Scanning tunneling microscopy

KW - Surface electronic phenomena (work function, surface potential, surface states, etc.)

KW - Surface structure, morphology, roughness, and topography

UR - http://www.scopus.com/inward/record.url?scp=0037055531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037055531&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(02)01651-5

DO - 10.1016/S0039-6028(02)01651-5

M3 - Article

AN - SCOPUS:0037055531

VL - 514

SP - 343

EP - 349

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

Structures and electronic states of the InSb{1 1 1}A,B-(2 × 2) surfaces

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this