Structure study of thin RPECVD CdxZn1-xS films

N. I. Fainer, M. L. Kosinova, Yu M. Rumyantsev, E. A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N. P. Sysoeva, F. A. Kuznetsov

Research output: Contribution to journalConference article

Abstract

Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

Original languageEnglish
Pages (from-to)Pr3979-Pr3985
JournalJournal De Physique. IV : JP
Volume11
Issue number3
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Fainer, N. I., Kosinova, M. L., Rumyantsev, Y. M., Maximovski, E. A., Terauchi, M., Shibata, K., Satoh, F., Tanaka, M., Sysoeva, N. P., & Kuznetsov, F. A. (2001). Structure study of thin RPECVD CdxZn1-xS films. Journal De Physique. IV : JP, 11(3), Pr3979-Pr3985. https://doi.org/10.1051/jp4:20013123