Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Aihua Zhong, Ping Fan, Yuanting Zhong, Dongping Zhang, Fu Li, Jingting Luo, Yizhu Xie, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

Original languageEnglish
Article number51
JournalNanoscale Research Letters
Publication statusPublished - 2018


  • Al droplets
  • GaN
  • Growth model
  • Nanowall network

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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