Structure of the MBE-grown GaAs(001)-(2 × 4) phase

Tomihiro Hashizume; Q. K. Xue; A. Ichimiya; Toshio Sakurai

doi:10.1016/0169-4332(94)00505-2

Structure of the MBE-grown GaAs(001)-(2 × 4) phase

Tomihiro Hashizume, Q. K. Xue, A. Ichimiya, Toshio Sakurai

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

Original language	English
Pages (from-to)	373-379
Number of pages	7
Journal	Applied Surface Science
Volume	87-88
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)00505-2
Publication status	Published - 1995 Mar 2

ASJC Scopus subject areas

Surfaces, Coatings and Films

Access to Document

10.1016/0169-4332(94)00505-2

Fingerprint Dive into the research topics of 'Structure of the MBE-grown GaAs(001)-(2 × 4) phase'. Together they form a unique fingerprint.

Cite this

Hashizume, T., Xue, Q. K., Ichimiya, A., & Sakurai, T. (1995). Structure of the MBE-grown GaAs(001)-(2 × 4) phase. Applied Surface Science, 87-88(C), 373-379. https://doi.org/10.1016/0169-4332(94)00505-2

@article{c699143b6b534e1f95ba6c089cfec57e,

title = "Structure of the MBE-grown GaAs(001)-(2 × 4) phase",

abstract = "The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.",

author = "Tomihiro Hashizume and Xue, {Q. K.} and A. Ichimiya and Toshio Sakurai",

year = "1995",

month = mar,

day = "2",

doi = "10.1016/0169-4332(94)00505-2",

language = "English",

volume = "87-88",

pages = "373--379",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "C",

}

TY - JOUR

T1 - Structure of the MBE-grown GaAs(001)-(2 × 4) phase

AU - Hashizume, Tomihiro

AU - Xue, Q. K.

AU - Ichimiya, A.

AU - Sakurai, Toshio

PY - 1995/3/2

Y1 - 1995/3/2

N2 - The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

AB - The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

UR - http://www.scopus.com/inward/record.url?scp=17044445954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044445954&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(94)00505-2

DO - 10.1016/0169-4332(94)00505-2

M3 - Article

AN - SCOPUS:17044445954

VL - 87-88

SP - 373

EP - 379

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - C

ER -