Structure of the MBE-grown GaAs(001)-(2 × 4) phase

Tomihiro Hashizume; Q. K. Xue; A. Ichimiya; Toshio Sakurai

doi:10.1016/0169-4332(94)00505-2

Structure of the MBE-grown GaAs(001)-(2 × 4) phase

Tomihiro Hashizume, Q. K. Xue, A. Ichimiya, Toshio Sakurai

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

Original language	English
Pages (from-to)	373-379
Number of pages	7
Journal	Applied Surface Science
Volume	87-88
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)00505-2
Publication status	Published - 1995 Mar 2

ASJC Scopus subject areas

Surfaces, Coatings and Films

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10.1016/0169-4332(94)00505-2

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title = "Structure of the MBE-grown GaAs(001)-(2 × 4) phase",

abstract = "The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.",

author = "Tomihiro Hashizume and Xue, {Q. K.} and A. Ichimiya and Toshio Sakurai",

year = "1995",

month = mar,

day = "2",

doi = "10.1016/0169-4332(94)00505-2",

language = "English",

volume = "87-88",

pages = "373--379",

journal = "Applied Surface Science",

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publisher = "Elsevier",

number = "C",

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T1 - Structure of the MBE-grown GaAs(001)-(2 × 4) phase

AU - Hashizume, Tomihiro

AU - Xue, Q. K.

AU - Ichimiya, A.

AU - Sakurai, Toshio

PY - 1995/3/2

Y1 - 1995/3/2

N2 - The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

AB - The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

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U2 - 10.1016/0169-4332(94)00505-2

DO - 10.1016/0169-4332(94)00505-2

M3 - Article

AN - SCOPUS:17044445954

VL - 87-88

SP - 373

EP - 379

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - C

ER -

Structure of the MBE-grown GaAs(001)-(2 × 4) phase

Abstract

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