Abstract
The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.
Original language | English |
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Pages (from-to) | 373-379 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 87-88 |
Issue number | C |
DOIs | |
Publication status | Published - 1995 Mar 2 |
ASJC Scopus subject areas
- Surfaces, Coatings and Films