Structure of the MBE-grown GaAs(001)-(2 × 4) phase

Tomihiro Hashizume, Q. K. Xue, A. Ichimiya, Toshio Sakurai

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.

    Original languageEnglish
    Pages (from-to)373-379
    Number of pages7
    JournalApplied Surface Science
    Volume87-88
    Issue numberC
    DOIs
    Publication statusPublished - 1995 Mar 2

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

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    Hashizume, T., Xue, Q. K., Ichimiya, A., & Sakurai, T. (1995). Structure of the MBE-grown GaAs(001)-(2 × 4) phase. Applied Surface Science, 87-88(C), 373-379. https://doi.org/10.1016/0169-4332(94)00505-2