TY - JOUR
T1 - Structure of Se-adsorbed GaAs(111)A-(2√3×2√3)-R30° surface
AU - Ohtake, Akihiro
AU - Komura, Takuji
AU - Hanada, Takashi
AU - Miwa, Shiro
AU - Yasuda, Tetsuji
AU - Arai, Kenta
AU - Yao, Takafumi
PY - 1999
Y1 - 1999
N2 - The adsorption of Se on the GaAs(111)A surface forms a well-ordered (2√3×2√3)-R30° reconstruction. We have proposed a structure model for the GaAs (111)A - (2√3×2√3)-R30° -Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and satisfies electron counting requirements.
AB - The adsorption of Se on the GaAs(111)A surface forms a well-ordered (2√3×2√3)-R30° reconstruction. We have proposed a structure model for the GaAs (111)A - (2√3×2√3)-R30° -Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and satisfies electron counting requirements.
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U2 - 10.1103/PhysRevB.59.8032
DO - 10.1103/PhysRevB.59.8032
M3 - Article
AN - SCOPUS:0001391250
VL - 59
SP - 8032
EP - 8036
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 12
ER -