Structure of Se-adsorbed GaAs(111)A-(2√3×2√3)-R30° surface

Akihiro Ohtake, Takuji Komura, Takashi Hanada, Shiro Miwa, Tetsuji Yasuda, Kenta Arai, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

The adsorption of Se on the GaAs(111)A surface forms a well-ordered (2√3×2√3)-R30° reconstruction. We have proposed a structure model for the GaAs (111)A - (2√3×2√3)-R30° -Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and satisfies electron counting requirements.

Original languageEnglish
Pages (from-to)8032-8036
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number12
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Structure of Se-adsorbed GaAs(111)A-(2√3×2√3)-R30° surface'. Together they form a unique fingerprint.

Cite this