The adsorption of Se on the GaAs(111)A surface forms a well-ordered (2√3×2√3)-R30° reconstruction. We have proposed a structure model for the GaAs (111)A - (2√3×2√3)-R30° -Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and satisfies electron counting requirements.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics