Structure of oxygen-related defect centers in Ge1-xSi x alloys studied by extended energy-loss fine structure analysis

Shunsuke Muto, Hiroshi Sugiyama, Ichiro Yonenega, Tetsuo Tanabe

Research output: Contribution to journalArticle

Abstract

Oxygen atoms dissolved near the surface regions in Ge1-xSi x alloys were studied by extended energy-loss fine structure (EXELFS) analysis using electron energy-loss spectroscopy (EELS) and the local structures around oxygen were determined. Oxygen preferentially formed Si-O-Si centers, rather than Si-O-Ge or Ge-O-Ge. The O-Si bond length was increased with decreasing the Si content, in accordance with the increase in the Si-Si, Si-Ge and Ge-Ge bond lengths. The increase in O-Si bond length is much more significant than that expected from the changes in Si-Si, Si-Ge and Ge-Ge bond lengths. The derived local atomic configuration of the Si-O-Si center changed with increasing Si content, which corresponds well to the surface oxidization process of crystalline silicon.

Original languageEnglish
Pages (from-to)1892-1896
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 A
DOIs
Publication statusPublished - 2005 Apr 1

Keywords

  • Electron energy-loss spectroscopy
  • Extended energy-loss fine structure
  • Ge-Si alloy
  • Interstitial oxygen
  • Surface oxidation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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