Abstract
Oxygen atoms dissolved near the surface regions in Ge1-xSi x alloys were studied by extended energy-loss fine structure (EXELFS) analysis using electron energy-loss spectroscopy (EELS) and the local structures around oxygen were determined. Oxygen preferentially formed Si-O-Si centers, rather than Si-O-Ge or Ge-O-Ge. The O-Si bond length was increased with decreasing the Si content, in accordance with the increase in the Si-Si, Si-Ge and Ge-Ge bond lengths. The increase in O-Si bond length is much more significant than that expected from the changes in Si-Si, Si-Ge and Ge-Ge bond lengths. The derived local atomic configuration of the Si-O-Si center changed with increasing Si content, which corresponds well to the surface oxidization process of crystalline silicon.
Original language | English |
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Pages (from-to) | 1892-1896 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 4 A |
DOIs | |
Publication status | Published - 2005 Apr |
Externally published | Yes |
Keywords
- Electron energy-loss spectroscopy
- Extended energy-loss fine structure
- Ge-Si alloy
- Interstitial oxygen
- Surface oxidation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)