Structure of NiO and Li-doped NiO single crystalline thin layers with atomically flat surface

U. S. Joshi, R. Takahashi, Y. Matsumoto, H. Koinuma

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Crystalline thin films of NiO and nominally 20 at.% Li-doped NiO were deposited at room temperature by pulsed laser deposition on the lattice matched MgO (100) substrate. As-deposited films were annealed at various temperatures to promote a solid phase epitaxial growth and control the surface morphology. Films were characterized by AFM and RHEED measurements. AFM images of the NiO film annealed at 1200 °C for 30 min showed an atomically flat surface and an excellent step-terrace morphology with a step height corresponding to one unit cell of NiO over a wide range of 2 μm×2 μm. Formation of atomically smooth surface in a range of annealing temperatures is highlighted and a temperature of 1200 °C is identified as being the most suitable in the solid phase epitaxy for single crystalline growth and a smooth surface of the films deposited by PLD.

Original languageEnglish
Pages (from-to)214-217
Number of pages4
JournalThin Solid Films
Volume486
Issue number1-2
DOIs
Publication statusPublished - 2005 Aug 22
Externally publishedYes

Keywords

  • Oxides
  • Pulsed laser deposition
  • Solid phase epitaxy
  • Surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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