Abstract
Crystalline thin films of NiO and nominally 20 at.% Li-doped NiO were deposited at room temperature by pulsed laser deposition on the lattice matched MgO (100) substrate. As-deposited films were annealed at various temperatures to promote a solid phase epitaxial growth and control the surface morphology. Films were characterized by AFM and RHEED measurements. AFM images of the NiO film annealed at 1200 °C for 30 min showed an atomically flat surface and an excellent step-terrace morphology with a step height corresponding to one unit cell of NiO over a wide range of 2 μm×2 μm. Formation of atomically smooth surface in a range of annealing temperatures is highlighted and a temperature of 1200 °C is identified as being the most suitable in the solid phase epitaxy for single crystalline growth and a smooth surface of the films deposited by PLD.
Original language | English |
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Pages (from-to) | 214-217 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 486 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2005 Aug 22 |
Externally published | Yes |
Keywords
- Oxides
- Pulsed laser deposition
- Solid phase epitaxy
- Surface morphology
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry