Abstract
Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.
| Original language | English |
|---|---|
| Pages (from-to) | 483-496 |
| Number of pages | 14 |
| Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
| Volume | 47 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1983 Apr |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- Metals and Alloys
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Hiraga, K., Tsuno, K., Shindo, D., Hirabayashi, M., Hayashi, S., & Hirai, T. (1983). Structure of α- and β-Si3N4 observed by 1 MV electron microscopy. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 47(4), 483-496. https://doi.org/10.1080/01418618308245241