Structure of α- and β-Si3N4 observed by 1 MV electron microscopy

K. Hiraga, K. Tsuno, D. Shindo, M. Hirabayashi, S. Hayashi, T. Hirai

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)


    Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.

    Original languageEnglish
    Pages (from-to)483-496
    Number of pages14
    JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
    Issue number4
    Publication statusPublished - 1983 Apr

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Science(all)
    • Condensed Matter Physics
    • Physics and Astronomy (miscellaneous)
    • Metals and Alloys


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