Abstract
Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.
Original language | English |
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Pages (from-to) | 483-496 |
Number of pages | 14 |
Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
Volume | 47 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1983 Apr |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- Metals and Alloys