Structure of α- and β-Si3N4 observed by 1 MV electron microscopy

K. Hiraga; K. Tsuno; D. Shindo; M. Hirabayashi; S. Hayashi; T. Hirai

doi:10.1080/01418618308245241

Structure of α- and β-Si₃N₄ observed by 1 MV electron microscopy

K. Hiraga, K. Tsuno, D. Shindo, M. Hirabayashi, S. Hayashi, T. Hirai

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Crystal structures of Si₂N₄ prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si₂N₄ respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si₂N₄ is proposed directly from the images.

Original language	English
Pages (from-to)	483-496
Number of pages	14
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	47
Issue number	4
DOIs	https://doi.org/10.1080/01418618308245241
Publication status	Published - 1983 Apr

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Science(all)
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Metals and Alloys

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title = "Structure of α- and β-Si3N4 observed by 1 MV electron microscopy",

abstract = "Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.",

author = "K. Hiraga and K. Tsuno and D. Shindo and M. Hirabayashi and S. Hayashi and T. Hirai",

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T1 - Structure of α- and β-Si3N4 observed by 1 MV electron microscopy

AU - Hiraga, K.

AU - Tsuno, K.

AU - Shindo, D.

AU - Hirabayashi, M.

AU - Hayashi, S.

AU - Hirai, T.

PY - 1983/4

Y1 - 1983/4

N2 - Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.

AB - Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.

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