CryBtal structures of Si3N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam images with  axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si3N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-SixN4 is proposed directly from the images.
|Number of pages||14|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|Publication status||Published - 1983 Apr|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)