Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

Toyohiro Chikyow, Michihisa Iijima, Nobuyuki Koguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAlAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and Al2Se3 layer formation at the interface of GaAs/Se-terminated GaAlAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.

Original languageEnglish
Title of host publicationIII-V Electronic and Photonic Device Fabrication and Performance
EditorsK.S. Jones, S.J. Pearton, H. Kanber
PublisherPubl by Materials Research Society
Pages519-524
Number of pages6
ISBN (Print)1558991964
Publication statusPublished - 1993 Dec 1
Externally publishedYes
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume300
ISSN (Print)0272-9172

Conference

ConferenceMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period93/4/1293/4/15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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