Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

Toyohiro Chikyow; Michihisa Iijima; Nobuyuki Koguchi

Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

Toyohiro Chikyow, Michihisa Iijima, Nobuyuki Koguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAlAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga₂Se₃ and Al₂Se₃ layer formation at the interface of GaAs/Se-terminated GaAlAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.

Original language	English
Title of host publication	III-V Electronic and Photonic Device Fabrication and Performance
Editors	K.S. Jones, S.J. Pearton, H. Kanber
Publisher	Publ by Materials Research Society
Pages	519-524
Number of pages	6
ISBN (Print)	1558991964
Publication status	Published - 1993 Dec 1
Externally published	Yes
Event	Materials Research Society Spring Meeting - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 15

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	300
ISSN (Print)	0272-9172

Conference

Conference	Materials Research Society Spring Meeting
City	San Francisco, CA, USA
Period	93/4/12 → 93/4/15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Chikyow, T., Iijima, M., & Koguchi, N. (1993). Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure. In K. S. Jones, S. J. Pearton, & H. Kanber (Eds.), III-V Electronic and Photonic Device Fabrication and Performance (pp. 519-524). (Materials Research Society Symposium Proceedings; Vol. 300). Publ by Materials Research Society.

Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure. / Chikyow, Toyohiro; Iijima, Michihisa; Koguchi, Nobuyuki.

III-V Electronic and Photonic Device Fabrication and Performance. ed. / K.S. Jones; S.J. Pearton; H. Kanber. Publ by Materials Research Society, 1993. p. 519-524 (Materials Research Society Symposium Proceedings; Vol. 300).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chikyow, T, Iijima, M & Koguchi, N 1993, Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure. in KS Jones, SJ Pearton & H Kanber (eds), III-V Electronic and Photonic Device Fabrication and Performance. Materials Research Society Symposium Proceedings, vol. 300, Publ by Materials Research Society, pp. 519-524, Materials Research Society Spring Meeting, San Francisco, CA, USA, 93/4/12.

Chikyow, Toyohiro ; Iijima, Michihisa ; Koguchi, Nobuyuki. / Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure. III-V Electronic and Photonic Device Fabrication and Performance. editor / K.S. Jones ; S.J. Pearton ; H. Kanber. Publ by Materials Research Society, 1993. pp. 519-524 (Materials Research Society Symposium Proceedings).

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abstract = "A selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAlAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and Al2Se3 layer formation at the interface of GaAs/Se-terminated GaAlAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.",

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AB - A selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAlAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and Al2Se3 layer formation at the interface of GaAs/Se-terminated GaAlAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.

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Structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

Abstract

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ASJC Scopus subject areas

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