Structure modulation of Al0.5In0.5P studied by energy-filtered electron diffraction and high-resolution electron microscopy

Daisuke Shindo; Yuichi Konno; Sung Hwan Lim; Akiko Gomyo

doi:10.1143/jjap.37.2593

Structure modulation of Al_0.5In_0.5P studied by energy-filtered electron diffraction and high-resolution electron microscopy

Daisuke Shindo, Yuichi Konno, Sung Hwan Lim, Akiko Gomyo

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Structure modulation of a III-V alloy semiconductor Al_0.5In_0.5P was investigated by electron diffraction and high-resolution electron microscopy (HREM). By utilizing an energy filter, the background of the electron diffraction patterns was markedly reduced and two types of the diffuse scattering were clearly revealed. One type of diffuse scattering is situated at the midpoint of the fundamental reflections while the other type is situated around the fundamental reflections. From the analysis of the HREM image, the structure modulation is interpreted to result from the ordering and the concentration modulation of Al and In. Furthermore, a structure model of Al_0.5In_0.5P is derived from the HREM image, and diffraction intensity calculated based on the structure model shows good agreement with the observed intensity.

Original language	English
Pages (from-to)	2593-2597
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.37.2593
Publication status	Published - 1998
Externally published	Yes

Keywords

Alloy semiconductor
Diffuse scattering
Energy filtering
Image processing
Imaging plate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.2593

Cite this

Structure modulation of Al_0.5In_0.5P studied by energy-filtered electron diffraction and high-resolution electron microscopy. / Shindo, Daisuke; Konno, Yuichi; Lim, Sung Hwan; Gomyo, Akiko.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 5 A, 1998, p. 2593-2597.

Research output: Contribution to journal › Article › peer-review

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abstract = "Structure modulation of a III-V alloy semiconductor Al0.5In0.5P was investigated by electron diffraction and high-resolution electron microscopy (HREM). By utilizing an energy filter, the background of the electron diffraction patterns was markedly reduced and two types of the diffuse scattering were clearly revealed. One type of diffuse scattering is situated at the midpoint of the fundamental reflections while the other type is situated around the fundamental reflections. From the analysis of the HREM image, the structure modulation is interpreted to result from the ordering and the concentration modulation of Al and In. Furthermore, a structure model of Al0.5In0.5P is derived from the HREM image, and diffraction intensity calculated based on the structure model shows good agreement with the observed intensity.",

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PY - 1998

Y1 - 1998

N2 - Structure modulation of a III-V alloy semiconductor Al0.5In0.5P was investigated by electron diffraction and high-resolution electron microscopy (HREM). By utilizing an energy filter, the background of the electron diffraction patterns was markedly reduced and two types of the diffuse scattering were clearly revealed. One type of diffuse scattering is situated at the midpoint of the fundamental reflections while the other type is situated around the fundamental reflections. From the analysis of the HREM image, the structure modulation is interpreted to result from the ordering and the concentration modulation of Al and In. Furthermore, a structure model of Al0.5In0.5P is derived from the HREM image, and diffraction intensity calculated based on the structure model shows good agreement with the observed intensity.

AB - Structure modulation of a III-V alloy semiconductor Al0.5In0.5P was investigated by electron diffraction and high-resolution electron microscopy (HREM). By utilizing an energy filter, the background of the electron diffraction patterns was markedly reduced and two types of the diffuse scattering were clearly revealed. One type of diffuse scattering is situated at the midpoint of the fundamental reflections while the other type is situated around the fundamental reflections. From the analysis of the HREM image, the structure modulation is interpreted to result from the ordering and the concentration modulation of Al and In. Furthermore, a structure model of Al0.5In0.5P is derived from the HREM image, and diffraction intensity calculated based on the structure model shows good agreement with the observed intensity.

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