To precisely control the dielectric constant and the structure of a low-k SiOC film, we have developed a neutral-beam-enhanced chemical vapour deposition (NBECVD) method. Using Ar NBECVD, we can precisely control the dielectric constant and the film modulus of low-k SiOC deposited on Si substrates because this method avoids precursor dissociation that results from electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear (two-dimensional SiOC), network and cage (three-dimensional SiOC) structures by changing the precursor, we obtained a k value of 2.2 and a reasonable modulus by using dimethyl dimethoxy silane as a precursor. Additionally, the NBECVD process is applicable as a method for damage-free super-low-k film deposition on the underlying low-k film that is sensitive to damage by the plasma.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films