Structure-designable method to form super low-k SiOC film (k = 2.2) by neutral-beam-enhanced chemical vapour deposition

Shigeo Yasuhara, Juhyun Chung, Kunitoshi Tajima, Hisashi Yano, Shingo Kadomura, Masaki Yoshimaru, Noriaki Matsunaga, Tomohiro Kubota, Hiroto Ohtake, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

To precisely control the dielectric constant and the structure of a low-k SiOC film, we have developed a neutral-beam-enhanced chemical vapour deposition (NBECVD) method. Using Ar NBECVD, we can precisely control the dielectric constant and the film modulus of low-k SiOC deposited on Si substrates because this method avoids precursor dissociation that results from electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear (two-dimensional SiOC), network and cage (three-dimensional SiOC) structures by changing the precursor, we obtained a k value of 2.2 and a reasonable modulus by using dimethyl dimethoxy silane as a precursor. Additionally, the NBECVD process is applicable as a method for damage-free super-low-k film deposition on the underlying low-k film that is sensitive to damage by the plasma.

Original languageEnglish
Article number055208
JournalJournal of Physics D: Applied Physics
Volume42
Issue number5
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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