Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD

Shigeo Yasuhara; Juhyun Chung; Kunitoshi Tajima; Hisashi Yano; Shingo Kadomura; Masaki Yoshimaru; Noriaki Matsunaga; Tomohiro Kubota; Hiroto Ohtake; Seiji Samukawa

doi:10.1109/IITC.2008.4546929

Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD

Shigeo Yasuhara, Juhyun Chung, Kunitoshi Tajima, Hisashi Yano, Shingo Kadomura, Masaki Yoshimaru, Noriaki Matsunaga, Tomohiro Kubota, Hiroto Ohtake, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH ₃)_x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.

Original language	English
Title of host publication	2008 IEEE International Interconnect Technology Conference, IITC
Pages	73-75
Number of pages	3
DOIs	https://doi.org/10.1109/IITC.2008.4546929
Publication status	Published - 2008
Event	2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States Duration: 2008 Jun 1 → 2008 Jun 4

Publication series

Name	2008 IEEE International Interconnect Technology Conference, IITC

Other

Other	2008 IEEE International Interconnect Technology Conference, IITC
Country	United States
City	Burlingame, CA
Period	08/6/1 → 08/6/4

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IITC.2008.4546929

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Yasuhara, S., Chung, J., Tajima, K., Yano, H., Kadomura, S., Yoshimaru, M., Matsunaga, N., Kubota, T., Ohtake, H., & Samukawa, S. (2008). Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD. In 2008 IEEE International Interconnect Technology Conference, IITC (pp. 73-75). [4546929] (2008 IEEE International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2008.4546929

Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD. / Yasuhara, Shigeo; Chung, Juhyun; Tajima, Kunitoshi; Yano, Hisashi; Kadomura, Shingo; Yoshimaru, Masaki; Matsunaga, Noriaki; Kubota, Tomohiro; Ohtake, Hiroto; Samukawa, Seiji.

2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 73-75 4546929 (2008 IEEE International Interconnect Technology Conference, IITC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yasuhara, S, Chung, J, Tajima, K, Yano, H, Kadomura, S, Yoshimaru, M, Matsunaga, N, Kubota, T, Ohtake, H & Samukawa, S 2008, Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD. in 2008 IEEE International Interconnect Technology Conference, IITC., 4546929, 2008 IEEE International Interconnect Technology Conference, IITC, pp. 73-75, 2008 IEEE International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 08/6/1. https://doi.org/10.1109/IITC.2008.4546929

Yasuhara S, Chung J, Tajima K, Yano H, Kadomura S, Yoshimaru M et al. Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD. In 2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 73-75. 4546929. (2008 IEEE International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2008.4546929

Yasuhara, Shigeo ; Chung, Juhyun ; Tajima, Kunitoshi ; Yano, Hisashi ; Kadomura, Shingo ; Yoshimaru, Masaki ; Matsunaga, Noriaki ; Kubota, Tomohiro ; Ohtake, Hiroto ; Samukawa, Seiji. / Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD. 2008 IEEE International Interconnect Technology Conference, IITC. 2008. pp. 73-75 (2008 IEEE International Interconnect Technology Conference, IITC).

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abstract = "Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.",

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AU - Kadomura, Shingo

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