Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD

Shigeo Yasuhara, Juhyun Chung, Kunitoshi Tajima, Hisashi Yano, Shingo Kadomura, Masaki Yoshimaru, Noriaki Matsunaga, Tomohiro Kubota, Hiroto Ohtake, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.

Original languageEnglish
Title of host publication2008 IEEE International Interconnect Technology Conference, IITC
Pages73-75
Number of pages3
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2008 Jun 12008 Jun 4

Publication series

Name2008 IEEE International Interconnect Technology Conference, IITC

Other

Other2008 IEEE International Interconnect Technology Conference, IITC
CountryUnited States
CityBurlingame, CA
Period08/6/108/6/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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