TY - GEN
T1 - Structure-designable formation-method of super low-k SiOC film (k=2.2) by neutral-beam-enhanced-CVD
AU - Yasuhara, Shigeo
AU - Chung, Juhyun
AU - Tajima, Kunitoshi
AU - Yano, Hisashi
AU - Kadomura, Shingo
AU - Yoshimaru, Masaki
AU - Matsunaga, Noriaki
AU - Kubota, Tomohiro
AU - Ohtake, Hiroto
AU - Samukawa, Seiji
PY - 2008
Y1 - 2008
N2 - Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.
AB - Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.
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U2 - 10.1109/IITC.2008.4546929
DO - 10.1109/IITC.2008.4546929
M3 - Conference contribution
AN - SCOPUS:50949117668
SN - 9781424419111
T3 - 2008 IEEE International Interconnect Technology Conference, IITC
SP - 73
EP - 75
BT - 2008 IEEE International Interconnect Technology Conference, IITC
T2 - 2008 IEEE International Interconnect Technology Conference, IITC
Y2 - 1 June 2008 through 4 June 2008
ER -