Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

A. A. Shklyaev, V. I. Vdovin, V. A. Volodin, D. V. Gulyaev, A. S. Kozhukhov, M. Sakuraba, J. Murota

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Abstract The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si0.5Ge0.5 become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 C which is significantly lower than that for the pure Si layers. Moreover, the Si0.5Ge0.5 layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si0.5Ge0.5 is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature.

Original languageEnglish
Article number34156
Pages (from-to)131-135
Number of pages5
JournalThin Solid Films
Volume579
DOIs
Publication statusPublished - 2015 Mar 31

Keywords

  • Chemical vapor deposition
  • Photoluminescence
  • Polycrystalline structure
  • Silicon
  • Silicon dioxide
  • Silicon germanium
  • Surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Shklyaev, A. A., Vdovin, V. I., Volodin, V. A., Gulyaev, D. V., Kozhukhov, A. S., Sakuraba, M., & Murota, J. (2015). Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition. Thin Solid Films, 579, 131-135. [34156]. https://doi.org/10.1016/j.tsf.2015.02.076