Abstract
Ge(110) was implanted with 125 keV 12C+ at 50° tilted as well as 80 keV 12C+ perpendicular to the surface to dose of ∼1 × 1017 ions/cm2 at room temperature. The total content of implanted C in Ge was estimated by 12C(d,p)13C nuclear reactions using 1.25 MeV d+ beams. The damage profiles were characterized by 2 MeV He+ Rutherford backscattering spectrometry/channeling. The implanted C atoms were found to be strongly trapped by the defects introduced during implantation. After annealing at 500 °C for 30 min on the sample implanted under grazing condition, the trapped C migrates towards the surface and aggregated as nano-sized graphite clusters. The possible mechanism for the changes in the structure and optical properties of carbon implanted Ge is discussed.
Original language | English |
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Pages (from-to) | 233-236 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 206 |
DOIs | |
Publication status | Published - 2003 May |
Externally published | Yes |
Event | 13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 2002 Sep 1 → 2002 Sep 6 |
Keywords
- Carbon
- Germanium
- Ion implantation
- Structure and optical properties
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation