Structure and optical properties of germanium implanted with carbon ions

P. Wei, Y. Xu, S. Nagata, K. Narumi, H. Naramoto

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Ge(110) was implanted with 125 keV 12C+ at 50° tilted as well as 80 keV 12C+ perpendicular to the surface to dose of ∼1 × 1017 ions/cm2 at room temperature. The total content of implanted C in Ge was estimated by 12C(d,p)13C nuclear reactions using 1.25 MeV d+ beams. The damage profiles were characterized by 2 MeV He+ Rutherford backscattering spectrometry/channeling. The implanted C atoms were found to be strongly trapped by the defects introduced during implantation. After annealing at 500 °C for 30 min on the sample implanted under grazing condition, the trapped C migrates towards the surface and aggregated as nano-sized graphite clusters. The possible mechanism for the changes in the structure and optical properties of carbon implanted Ge is discussed.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 2003 May
Externally publishedYes
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: 2002 Sep 12002 Sep 6


  • Carbon
  • Germanium
  • Ion implantation
  • Structure and optical properties

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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