Structure and optical properties of germanium implanted with carbon ions

P. Wei; Y. Xu; S. Nagata; K. Narumi; H. Naramoto

doi:10.1016/S0168-583X(03)00738-9

Structure and optical properties of germanium implanted with carbon ions

P. Wei, Y. Xu, S. Nagata, K. Narumi, H. Naramoto

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Ge(110) was implanted with 125 keV ¹²C⁺ at 50° tilted as well as 80 keV ¹²C⁺ perpendicular to the surface to dose of ∼1 × 10¹⁷ ions/cm² at room temperature. The total content of implanted C in Ge was estimated by ¹²C(d,p)¹³C nuclear reactions using 1.25 MeV d⁺ beams. The damage profiles were characterized by 2 MeV He⁺ Rutherford backscattering spectrometry/channeling. The implanted C atoms were found to be strongly trapped by the defects introduced during implantation. After annealing at 500 °C for 30 min on the sample implanted under grazing condition, the trapped C migrates towards the surface and aggregated as nano-sized graphite clusters. The possible mechanism for the changes in the structure and optical properties of carbon implanted Ge is discussed.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00738-9
Publication status	Published - 2003 May
Event	13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 2002 Sep 1 → 2002 Sep 6

Keywords

Carbon
Germanium
Ion implantation
Structure and optical properties

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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title = "Structure and optical properties of germanium implanted with carbon ions",

abstract = "Ge(110) was implanted with 125 keV 12C+ at 50° tilted as well as 80 keV 12C+ perpendicular to the surface to dose of ∼1 × 1017 ions/cm2 at room temperature. The total content of implanted C in Ge was estimated by 12C(d,p)13C nuclear reactions using 1.25 MeV d+ beams. The damage profiles were characterized by 2 MeV He+ Rutherford backscattering spectrometry/channeling. The implanted C atoms were found to be strongly trapped by the defects introduced during implantation. After annealing at 500 °C for 30 min on the sample implanted under grazing condition, the trapped C migrates towards the surface and aggregated as nano-sized graphite clusters. The possible mechanism for the changes in the structure and optical properties of carbon implanted Ge is discussed.",

keywords = "Carbon, Germanium, Ion implantation, Structure and optical properties",

author = "P. Wei and Y. Xu and S. Nagata and K. Narumi and H. Naramoto",

note = "Funding Information: P. Wei is grateful to JST and JISTEC for the STA fellowship grant no. 200101. ; 13th International conference on Ion beam modification of Mate ; Conference date: 01-09-2002 Through 06-09-2002",

year = "2003",

month = may,

doi = "10.1016/S0168-583X(03)00738-9",

language = "English",

volume = "206",

pages = "233--236",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Structure and optical properties of germanium implanted with carbon ions

AU - Wei, P.

AU - Xu, Y.

AU - Nagata, S.

AU - Narumi, K.

AU - Naramoto, H.

N1 - Funding Information: P. Wei is grateful to JST and JISTEC for the STA fellowship grant no. 200101.

PY - 2003/5

Y1 - 2003/5

N2 - Ge(110) was implanted with 125 keV 12C+ at 50° tilted as well as 80 keV 12C+ perpendicular to the surface to dose of ∼1 × 1017 ions/cm2 at room temperature. The total content of implanted C in Ge was estimated by 12C(d,p)13C nuclear reactions using 1.25 MeV d+ beams. The damage profiles were characterized by 2 MeV He+ Rutherford backscattering spectrometry/channeling. The implanted C atoms were found to be strongly trapped by the defects introduced during implantation. After annealing at 500 °C for 30 min on the sample implanted under grazing condition, the trapped C migrates towards the surface and aggregated as nano-sized graphite clusters. The possible mechanism for the changes in the structure and optical properties of carbon implanted Ge is discussed.

AB - Ge(110) was implanted with 125 keV 12C+ at 50° tilted as well as 80 keV 12C+ perpendicular to the surface to dose of ∼1 × 1017 ions/cm2 at room temperature. The total content of implanted C in Ge was estimated by 12C(d,p)13C nuclear reactions using 1.25 MeV d+ beams. The damage profiles were characterized by 2 MeV He+ Rutherford backscattering spectrometry/channeling. The implanted C atoms were found to be strongly trapped by the defects introduced during implantation. After annealing at 500 °C for 30 min on the sample implanted under grazing condition, the trapped C migrates towards the surface and aggregated as nano-sized graphite clusters. The possible mechanism for the changes in the structure and optical properties of carbon implanted Ge is discussed.

KW - Carbon

KW - Germanium

KW - Ion implantation

KW - Structure and optical properties

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U2 - 10.1016/S0168-583X(03)00738-9

DO - 10.1016/S0168-583X(03)00738-9

M3 - Conference article

AN - SCOPUS:0038823546

VL - 206

SP - 233

EP - 236

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

T2 - 13th International conference on Ion beam modification of Mate

Y2 - 1 September 2002 through 6 September 2002

ER -