Structure and ferroelectric properties of high TcBi(Me)O3-PbTiO3 single crystal thin films

K. Wasa, H. Hanzawa, Shinya Yoshida, Shuji Tanaka, H. Adachi, T. Matsunaga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.

Original languageEnglish
Title of host publication2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40-43
Number of pages4
ISBN (Print)9781479999743
DOIs
Publication statusPublished - 2015 Jul 29
EventJoint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015 - Singapore, Singapore
Duration: 2015 May 242015 May 27

Other

OtherJoint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
CountrySingapore
CitySingapore
Period15/5/2415/5/27

Keywords

  • beyond PZT
  • BS-xPT thin films
  • high Curie temperature
  • relaxed single crystal thin films
  • sputtered hetero-epitaxial thin films

ASJC Scopus subject areas

  • Instrumentation
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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    Wasa, K., Hanzawa, H., Yoshida, S., Tanaka, S., Adachi, H., & Matsunaga, T. (2015). Structure and ferroelectric properties of high TcBi(Me)O3-PbTiO3 single crystal thin films. In 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015 (pp. 40-43). [7172663] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.2015.7172663