Structure and ferroelectric properties of high TcBi(Me)O3-PbTiO3 single crystal thin films

K. Wasa; H. Hanzawa; S. Yoshida; S. Tanaka; H. Adachi; T. Matsunaga

doi:10.1109/ISAF.2015.7172663

Structure and ferroelectric properties of high T_cBi(Me)O₃-PbTiO₃ single crystal thin films

K. Wasa, H. Hanzawa, S. Yoshida, S. Tanaka, H. Adachi, T. Matsunaga

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Pb(Zr,Ti)O₃ (PZT) piezoelectric ceramics with higher Curie temperature T_c are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher T_cbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O₃-xPbTiO₃ ceramics(Me: Yb, In, Sc) are fascinated for the higher T_c materials. In this paper thin films of single crystal (1-x)BiScO₃-xPbTiO₃ (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high T_cBS-xPT (0.5≤x≤0.8) and SrRuO₃(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e_31,f was -6.7C/m² at x=0.8 with 2P_r=∼60μC/cm², 2E_c=∼250 kV/cm, and ε/ε_o=∼150. The BS-0.8PT thin films exhibit extraordinary high T_c with T_c=750°C. The enhanced T_c is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.

Original language	English
Title of host publication	2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	40-43
Number of pages	4
ISBN (Print)	9781479999743
DOIs	https://doi.org/10.1109/ISAF.2015.7172663
Publication status	Published - 2015 Jul 29
Event	Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015 - Singapore, Singapore Duration: 2015 May 24 → 2015 May 27

Other

Other	Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
Country/Territory	Singapore
City	Singapore
Period	15/5/24 → 15/5/27

Keywords

beyond PZT
BS-xPT thin films
high Curie temperature
relaxed single crystal thin films
sputtered hetero-epitaxial thin films

ASJC Scopus subject areas

Instrumentation
Ceramics and Composites
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISAF.2015.7172663

Cite this

Wasa, K., Hanzawa, H., Yoshida, S., Tanaka, S., Adachi, H., & Matsunaga, T. (2015). Structure and ferroelectric properties of high T_cBi(Me)O₃-PbTiO₃ single crystal thin films. In 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015 (pp. 40-43). [7172663] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.2015.7172663

Structure and ferroelectric properties of high T_cBi(Me)O₃-PbTiO₃ single crystal thin films. / Wasa, K.; Hanzawa, H.; Yoshida, S.; Tanaka, S.; Adachi, H.; Matsunaga, T.

2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 40-43 7172663.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wasa, K, Hanzawa, H, Yoshida, S , Tanaka, S, Adachi, H & Matsunaga, T 2015, Structure and ferroelectric properties of high T_cBi(Me)O₃-PbTiO₃ single crystal thin films. in 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015., 7172663, Institute of Electrical and Electronics Engineers Inc., pp. 40-43, Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015, Singapore, Singapore, 15/5/24. https://doi.org/10.1109/ISAF.2015.7172663

Wasa K, Hanzawa H, Yoshida S , Tanaka S, Adachi H, Matsunaga T. Structure and ferroelectric properties of high T_cBi(Me)O₃-PbTiO₃ single crystal thin films. In 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 40-43. 7172663 https://doi.org/10.1109/ISAF.2015.7172663

Wasa, K. ; Hanzawa, H. ; Yoshida, S. ; Tanaka, S. ; Adachi, H. ; Matsunaga, T. / Structure and ferroelectric properties of high T_cBi(Me)O₃-PbTiO₃ single crystal thin films. 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 40-43

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abstract = "Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.",

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AU - Adachi, H.

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N2 - Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.

AB - Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.

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