Structure and Ferroelectric Properties of High Tc BiScO3-PbTiO3 Epitaxial Thin Films

Kiyotaka Wasa, Shinya Yoshida, Hiroaki Hanzawa, Hideaki Adachi, Toshiyuki Matsunaga, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Piezoelectric ceramics of new composition with higher Curie temperature Tc are extensively studied for better piezoelectric microelectromechanical systems (MEMS). Apart from the compositional research, enhanced Tc could be achieved in a modified structure. We have considered that a designed laminated structure of Pb(Zr, Ti)O3 (PZT)-based thin film, i.e., relaxed heteroepitaxial epitaxial thin film, is one of the promising modified structures to enhance Tc. This structure exhibits an extraordinarily high Tc, i.e., Tc ∼ 600 °C (bulk Tc∼ 365 °C). In this paper, we have fabricated the designed laminated structure of high Tc (1-x)BiScO3-xPbTiO3. Tc of BS-0.8PT thin films was found to be extraordinarily high, i.e., Tc∼ 750 °C (bulk Tc, ∼ 500 °C). Their ferroelectric performances were comparable to those of PZT-based thin films. The present BS-xPT thin films have a high potential for fabrication of high-temperature-stable piezoelectric MEMS. The mechanism of the enhanced Tc is probably the presence of the mechanically stable interface to temperature in the laminated structure. We believe this designed laminated structure can extract fruitful properties of bulk ferroelectric ceramics.

Original languageEnglish
Article number7470471
Pages (from-to)1636-1641
Number of pages6
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume63
Issue number10
DOIs
Publication statusPublished - 2016 Oct

Keywords

  • (1 - x)BiScOPbTiO (BS-xPT) thin films
  • heteroepitaxial thin films
  • high Curie temperature
  • laminated structure
  • relaxed heteroepitaxial structure

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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