Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure

Takeshi Kawae, Yuji Hori, Takashi Nakajima, Hiroki Kawasaki, Norio Tokuda, Soichiro Okamura, Yoshihiko Takano, Akiharu Morimoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO3 (BPFM)B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kVcm were 60 Ccm 2 and 480 kVcm, respectively.

Original languageEnglish
Pages (from-to)G31-G34
JournalElectrochemical and Solid-State Letters
Volume14
Issue number6
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Kawae, T., Hori, Y., Nakajima, T., Kawasaki, H., Tokuda, N., Okamura, S., Takano, Y., & Morimoto, A. (2011). Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure. Electrochemical and Solid-State Letters, 14(6), G31-G34. https://doi.org/10.1149/1.3568838