Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure

Takeshi Kawae; Yuji Hori; Takashi Nakajima; Hiroki Kawasaki; Norio Tokuda; Soichiro Okamura; Yoshihiko Takano; Akiharu Morimoto

doi:10.1149/1.3568838

Structure and electrical properties of (Pr, Mn)-codoped BiFeO ₃B-doped diamond layered structure

Takeshi Kawae, Yuji Hori, Takashi Nakajima, Hiroki Kawasaki, Norio Tokuda, Soichiro Okamura, Yoshihiko Takano, Akiharu Morimoto

Institute for Materials Research (IMR)

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO₃ (BPFM)B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kVcm were 60 Ccm ² and 480 kVcm, respectively.

Original language	English
Pages (from-to)	G31-G34
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/1.3568838
Publication status	Published - 2011

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Kawae, T., Hori, Y., Nakajima, T., Kawasaki, H., Tokuda, N., Okamura, S., Takano, Y., & Morimoto, A. (2011). Structure and electrical properties of (Pr, Mn)-codoped BiFeO ₃B-doped diamond layered structure. Electrochemical and Solid-State Letters, 14(6), G31-G34. https://doi.org/10.1149/1.3568838

@article{92a7cedcad304f38a31b241020a20853,

title = "Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure",

abstract = "As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO3 (BPFM)B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kVcm were 60 Ccm 2 and 480 kVcm, respectively.",

author = "Takeshi Kawae and Yuji Hori and Takashi Nakajima and Hiroki Kawasaki and Norio Tokuda and Soichiro Okamura and Yoshihiko Takano and Akiharu Morimoto",

year = "2011",

doi = "10.1149/1.3568838",

language = "English",

volume = "14",

pages = "G31--G34",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure

AU - Kawae, Takeshi

AU - Hori, Yuji

AU - Nakajima, Takashi

AU - Kawasaki, Hiroki

AU - Tokuda, Norio

AU - Okamura, Soichiro

AU - Takano, Yoshihiko

AU - Morimoto, Akiharu

PY - 2011

Y1 - 2011

N2 - As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO3 (BPFM)B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kVcm were 60 Ccm 2 and 480 kVcm, respectively.

AB - As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO3 (BPFM)B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kVcm were 60 Ccm 2 and 480 kVcm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=79953768041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953768041&partnerID=8YFLogxK

U2 - 10.1149/1.3568838

DO - 10.1149/1.3568838

M3 - Article

AN - SCOPUS:79953768041

VL - 14

SP - G31-G34

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 6

ER -