Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

Haruki Usui, Hiraku Kusakabe, Makoto Tokuda, Kazumasa Sugiyama, Takuya Hoshina, Takaaki Tsurumi, Hiroaki Takeda

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.

Original languageEnglish
Pages (from-to)441-446
Number of pages6
JournalJournal of the Ceramic Society of Japan
Volume128
Issue number8
DOIs
Publication statusPublished - 2020 Aug 1

Keywords

  • Crystal growth
  • Crystal structure
  • High temperature
  • Langasite
  • Piezoelectricity

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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