Abstract
Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.
Original language | English |
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Pages (from-to) | 441-446 |
Number of pages | 6 |
Journal | Journal of the Ceramic Society of Japan |
Volume | 128 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2020 Aug 1 |
Keywords
- Crystal growth
- Crystal structure
- High temperature
- Langasite
- Piezoelectricity
ASJC Scopus subject areas
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry