Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

Haruki Usui; Hiraku Kusakabe; Makoto Tokuda; Kazumasa Sugiyama; Takuya Hoshina; Takaaki Tsurumi; Hiroaki Takeda

doi:10.2109/jcersj2.20016

Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

Haruki Usui, Hiraku Kusakabe, Makoto Tokuda, Kazumasa Sugiyama, Takuya Hoshina, Takaaki Tsurumi, Hiroaki Takeda

Materials Development Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.

Original language	English
Pages (from-to)	441-446
Number of pages	6
Journal	Journal of the Ceramic Society of Japan
Volume	128
Issue number	8
DOIs	https://doi.org/10.2109/jcersj2.20016
Publication status	Published - 2020 Aug 1

Keywords

Crystal growth
Crystal structure
High temperature
Langasite
Piezoelectricity

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj2.20016

Cite this

@article{ce5de6ad61b64e558ca0183eb71e7dd0,

title = "Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method",

abstract = "Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.",

keywords = "Crystal growth, Crystal structure, High temperature, Langasite, Piezoelectricity",

author = "Haruki Usui and Hiraku Kusakabe and Makoto Tokuda and Kazumasa Sugiyama and Takuya Hoshina and Takaaki Tsurumi and Hiroaki Takeda",

note = "Funding Information: Acknowledgments We would like to thank Mr K. Kawasaki of TDK corporation, Japan, for his helpful suggestions in the crystal growth process. Parts of this study were financially supported by the Grants-in-Aid for Scientific Research program of the Japan Society for the Promotion of Science (JSPS KAKENHI, grant number 19H02797).",

year = "2020",

month = aug,

day = "1",

doi = "10.2109/jcersj2.20016",

language = "English",

volume = "128",

pages = "441--446",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "8",

}

TY - JOUR

T1 - Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

AU - Usui, Haruki

AU - Kusakabe, Hiraku

AU - Tokuda, Makoto

AU - Sugiyama, Kazumasa

AU - Hoshina, Takuya

AU - Tsurumi, Takaaki

AU - Takeda, Hiroaki

N1 - Funding Information: Acknowledgments We would like to thank Mr K. Kawasaki of TDK corporation, Japan, for his helpful suggestions in the crystal growth process. Parts of this study were financially supported by the Grants-in-Aid for Scientific Research program of the Japan Society for the Promotion of Science (JSPS KAKENHI, grant number 19H02797).

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.

AB - Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.

KW - Crystal growth

KW - Crystal structure

KW - High temperature

KW - Langasite

KW - Piezoelectricity

UR - http://www.scopus.com/inward/record.url?scp=85090155850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85090155850&partnerID=8YFLogxK

U2 - 10.2109/jcersj2.20016

DO - 10.2109/jcersj2.20016

M3 - Article

AN - SCOPUS:85090155850

VL - 128

SP - 441

EP - 446

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 8

ER -

Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this