Atomic-layer epitaxy (ALE) processes of ZnSe on GaAs(001) have been studied using reflection high-energy electron diffraction (RHEED), total reflection-angle x-ray spectroscopy, and x-ray photoelectron spectroscopy. We have obtained direct evidence that the growing surface of ZnSe(001) changes its chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The rocking-curve analysis of RHEED have been used in structure analysis for these reconstructed surfaces: the (2×1) surface has the Se-dimer structure, in agreement with previous studies. On the other hand, we have found that the c(2×2) surface has the Se-vacancy structure, contrary to the previously proposed Zn-vacancy structure. The growth rate of ZnSe has been estimated to be about 0.5 bilayer per ALE cycle, which is consistent with the formation of these surface structures.
|Number of pages||7|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics