Structure and climb of faulted dipoles in GaAs

I. Yonenaga, S. H. Lim, D. Shindo, P. D. Brown, C. J. Humphreys

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Z-shape faulted dipoles in deformed GaAs were investigated by using high resolution electron microscopy. There is no difference in the core structure of the a and β dislocations of stair-rod and 90° Shockley partials, nor in the dissociated stacking fault width. The central stacking fault is found to generate large local atomic displacements and exhibits a different structure from that of the intrinsic stacking fault of a dissociated dislocation considered so far. 90° Shockley partials of Z-shape faulted dipole climbed through absorption of interstitials during electron irradiation.

Original languageEnglish
Pages (from-to)53-57
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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