TY - JOUR
T1 - Structure analysis of composition modulation in epitaxially-grown III-V semiconductor alloys
AU - Ishimaru, Manabu
AU - Hasegawa, Shigehiko
AU - Asahi, Hajime
AU - Sato, Kazuhisa
AU - Konno, Toyohiko J.
PY - 2013/11
Y1 - 2013/11
N2 - It has been reported that composition modulation is naturally formed in some of the epitaxially-grown thin films. Structural characterization of these materials is necessary for controlling their nanostructures precisely. Here, we prepared epitaxially-grown III-V semiconductor alloys and characterized their atomistic structures by means of diffraction crystallography and electron microscopy techniques. As a consequence, we found that the following quantum well structures are spontaneously formed: (1) ultrashort period lateral composition modulation (LCM) with a modulation period of ∼1 nm; (2) complex vertical composition modulated (VCM) structures consisting of two modulated structures with a different period (∼4 and ∼25 nm). The former LCM structure is created via nanoscale phase separation at the growth surface, while the shorter-period modulation in the later VCM structure is induced by rotating a substrate through an inhomogeneous distribution of the anion flux within a chamber.
AB - It has been reported that composition modulation is naturally formed in some of the epitaxially-grown thin films. Structural characterization of these materials is necessary for controlling their nanostructures precisely. Here, we prepared epitaxially-grown III-V semiconductor alloys and characterized their atomistic structures by means of diffraction crystallography and electron microscopy techniques. As a consequence, we found that the following quantum well structures are spontaneously formed: (1) ultrashort period lateral composition modulation (LCM) with a modulation period of ∼1 nm; (2) complex vertical composition modulated (VCM) structures consisting of two modulated structures with a different period (∼4 and ∼25 nm). The former LCM structure is created via nanoscale phase separation at the growth surface, while the shorter-period modulation in the later VCM structure is induced by rotating a substrate through an inhomogeneous distribution of the anion flux within a chamber.
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U2 - 10.7567/JJAP.52.110120
DO - 10.7567/JJAP.52.110120
M3 - Article
AN - SCOPUS:84889021540
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 PART 1
M1 - 110120
ER -