TY - JOUR
T1 - Structural transition control of laterally overgrown c-GaN and h-GaN on stripe-patterned GaAs (001) substrates by MOVPE
AU - Sanorpim, S.
AU - Takuma, E.
AU - Ichinose, H.
AU - Katayama, Ryuji
AU - Onabe, K.
PY - 2007/6/1
Y1 - 2007/6/1
N2 - Growth mechanisms and material quality of the laterally overgrown cubic-phase gallium nitride (c-GaN) and hexagonal-phase gallium nitride (h-GaN) on stripe-patterned GaAs (001) substrates were investigated using transmission electron microscopy (TEM). Investigational results show that h-GaN is only laterally overgrown along the (111)B facets of the c-GaN stripes with the growth direction of (0001)h-GaN//(111)B c-GaN for all the mask stripe orientations. Dislocation density in the laterally overgrown h-GaN regions for the [110]-stripe pattern is reduced to be lower than 104 cm-2, which is six orders of magnitude smaller than that in the conventionally grown h-GaN films. On the other hand, the laterally overgrown c-GaN with lower planar defect (stacking faults and twins) density presents in the region just above the stripe windows for the [110]-stripe pattern. In addition, a large reduction of planar defect density was found in the laterally overgrown c-GaN regions for the [100] stripe direction. Also, a model is used to describe the cubic-to-hexagonal structural transition in lateral-overgrown GaN on patterned GaAs (001) substrates for the purpose of lower dislocation and lower planar defect densities in the laterally overgrown h-GaN and c-GaN, respectively.
AB - Growth mechanisms and material quality of the laterally overgrown cubic-phase gallium nitride (c-GaN) and hexagonal-phase gallium nitride (h-GaN) on stripe-patterned GaAs (001) substrates were investigated using transmission electron microscopy (TEM). Investigational results show that h-GaN is only laterally overgrown along the (111)B facets of the c-GaN stripes with the growth direction of (0001)h-GaN//(111)B c-GaN for all the mask stripe orientations. Dislocation density in the laterally overgrown h-GaN regions for the [110]-stripe pattern is reduced to be lower than 104 cm-2, which is six orders of magnitude smaller than that in the conventionally grown h-GaN films. On the other hand, the laterally overgrown c-GaN with lower planar defect (stacking faults and twins) density presents in the region just above the stripe windows for the [110]-stripe pattern. In addition, a large reduction of planar defect density was found in the laterally overgrown c-GaN regions for the [100] stripe direction. Also, a model is used to describe the cubic-to-hexagonal structural transition in lateral-overgrown GaN on patterned GaAs (001) substrates for the purpose of lower dislocation and lower planar defect densities in the laterally overgrown h-GaN and c-GaN, respectively.
UR - http://www.scopus.com/inward/record.url?scp=34250338946&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34250338946&partnerID=8YFLogxK
U2 - 10.1002/pssb.200674716
DO - 10.1002/pssb.200674716
M3 - Article
AN - SCOPUS:34250338946
VL - 244
SP - 1769
EP - 1774
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 6
ER -