Structural study of β-SiC(001) films on Si(001) by laser chemical vapor deposition

Peipei Zhu, Qingfang Xu, Ruyi Chen, Song Zhang, Meijun Yang, Rong Tu, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


β-SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was β-SiC(001){111}//Si(001){111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 μm/h, which is 5-200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing β-SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8° to the surface of substrate. The growth mechanism of the films was discussed.

Original languageEnglish
Pages (from-to)1634-1641
Number of pages8
JournalJournal of the American Ceramic Society
Issue number4
Publication statusPublished - 2017 Apr 1


  • chemical vapor deposition
  • silicon carbide

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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