Structural studies of ultrathin silicon oxides and their interfaces by XPS

Takeo Hattori; Hiroaki Yamagishi; Noboru Koike; Keitaro Imai; Kikuo Yamabe

doi:10.1016/0169-4332(89)90094-9

Structural studies of ultrathin silicon oxides and their interfaces by XPS

Takeo Hattori, Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, Kikuo Yamabe

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the orientation dependent structure of ultrathin silicon oxide films, the weak stress relaxation effect on the chemical shift and the orientation dependent oxidation-induced chemical shifts were studied.

Original language	English
Pages (from-to)	416-419
Number of pages	4
Journal	Applied Surface Science
Volume	41-42
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(89)90094-9
Publication status	Published - 1990 Jan

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(89)90094-9

Cite this

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title = "Structural studies of ultrathin silicon oxides and their interfaces by XPS",

abstract = "From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the orientation dependent structure of ultrathin silicon oxide films, the weak stress relaxation effect on the chemical shift and the orientation dependent oxidation-induced chemical shifts were studied.",

author = "Takeo Hattori and Hiroaki Yamagishi and Noboru Koike and Keitaro Imai and Kikuo Yamabe",

year = "1990",

month = jan,

doi = "10.1016/0169-4332(89)90094-9",

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T1 - Structural studies of ultrathin silicon oxides and their interfaces by XPS

AU - Hattori, Takeo

AU - Yamagishi, Hiroaki

AU - Koike, Noboru

AU - Imai, Keitaro

AU - Yamabe, Kikuo

PY - 1990/1

Y1 - 1990/1

N2 - From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the orientation dependent structure of ultrathin silicon oxide films, the weak stress relaxation effect on the chemical shift and the orientation dependent oxidation-induced chemical shifts were studied.

AB - From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the orientation dependent structure of ultrathin silicon oxide films, the weak stress relaxation effect on the chemical shift and the orientation dependent oxidation-induced chemical shifts were studied.

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DO - 10.1016/0169-4332(89)90094-9

M3 - Article

AN - SCOPUS:0024764977

VL - 41-42

SP - 416

EP - 419

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - C

ER -

Structural studies of ultrathin silicon oxides and their interfaces by XPS

Abstract

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