Abstract
From XPS depth profiling of silicon oxide films formed on (100), (110) and (111) surfaces prepared by various oxidation processes, the orientation dependent structure of ultrathin silicon oxide films, the weak stress relaxation effect on the chemical shift and the orientation dependent oxidation-induced chemical shifts were studied.
Original language | English |
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Pages (from-to) | 416-419 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 41-42 |
Issue number | C |
DOIs | |
Publication status | Published - 1990 Jan |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films