TY - JOUR
T1 - Structural studies of Cu-III-VI2 chalcopyrite semiconductor heteroepitaxial films grown by low-pressure metalorganic vapor phase epitaxy
AU - Harada, Yoshiyuki
AU - Nakanishi, Hisayuki
AU - Chichibu, Shigefusa F.
PY - 2001/5/15
Y1 - 2001/5/15
N2 - Growth orientation, domain structures, and residual strain of Cu(Al,Ga)(S,Se)2 epitaxial films grown by low-pressure metalorganic vapor phase epitaxy on various substrates were systematically investigated. All epilayers grew in such a manner that the lattice mismatch between the epilayer and the substrate became minimum. Domain structure of the epilayer changed depending on the type of substrate. Most residual strain in the epilayer was assigned as being due to the pseudomorphic stress for the epilayers having small lattice mismatch (<1%) against the substrate and to the thermal stress for large lattice mismatch (>1%) ones.
AB - Growth orientation, domain structures, and residual strain of Cu(Al,Ga)(S,Se)2 epitaxial films grown by low-pressure metalorganic vapor phase epitaxy on various substrates were systematically investigated. All epilayers grew in such a manner that the lattice mismatch between the epilayer and the substrate became minimum. Domain structure of the epilayer changed depending on the type of substrate. Most residual strain in the epilayer was assigned as being due to the pseudomorphic stress for the epilayers having small lattice mismatch (<1%) against the substrate and to the thermal stress for large lattice mismatch (>1%) ones.
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U2 - 10.1063/1.1364643
DO - 10.1063/1.1364643
M3 - Article
AN - SCOPUS:0035873004
VL - 89
SP - 5406
EP - 5413
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
ER -