Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots

Yutaka Ohno, Kazuya Tajima, Kentaro Kutsukake, Noritaka Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dislocation clusters that would degrade the electric property can be generated from a grain boundary (GB) neighboring a triple junction of GBs. The atomic plane of the GB is bent via the movement of the triple junction, supposedly due to S3{111} micro-twins intersecting the GB, and a number of dislocations would be generated nearby the bending corner. Bundles of dislocation arrays expanding nearly parallel to the growth direction and honeycombed dislocation networks lying on a {111} plane nearly normal to the growth direction can coexist, suggesting that multiple slip systems would be operated when the dislocations are tangled.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2340
Number of pages1
ISBN (Electronic)9781728161150
DOIs
Publication statusPublished - 2020 Jun 14
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 2020 Jun 152020 Aug 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period20/6/1520/8/21

Keywords

  • dislocation sources
  • high-performance multicrystalline Si ingots
  • micro-twins
  • Triple junctions of grain boundaries

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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