TY - GEN
T1 - Structural properties of Mg2(Si,Ge,Sn)-based thermoelectric materials prepared by induction melting method
AU - Shubin, Alexander
AU - Karpenkov, Dmitriy
AU - Stepashkin, Andrey
AU - Arkhipov, Dmitriy
AU - Taskaev, Sergey
AU - Takagi, Toshiyuki
AU - Khovaylo, Vladimir
N1 - Funding Information:
Some of the studies described in this paper were supported by institutional grants from INSERM and CNRS, and by specific grants from the Commission of the European Communities, Association pour la Recherche sur le Cancer, and Ligue Nationale contre le Cancer. We thank Pierre Golstein, PhiIippe Massol, Arek Miazek, Lee Leserman, and Anne-Marie Schmitt-Verhulst for comments on the manuscript; Ludovica Bruno, Jim DiSanto, Dietmar Kappes, Paul Love, David Raulet, Cox Terhorst, and Eric Vivier for sharing unpublished data with us; Corinne B6ziers-La-Fosse for graphic art; and Noelle Guglietta and Veronique Pr6au for typing the manuscript.
Publisher Copyright:
© 2017 Trans Tech Publications, Switzerland.
PY - 2017
Y1 - 2017
N2 - We report on preparation of Mg2(Si,Ge,Sn)-based thermoelectric materials by a direct induction melting method in Al2O3 crucible. A 40 g ingot of Mg2Si0.8Sn0.1Ge0.1 was prepared after addition to the batch 10 wt% of Mg excess. Evolution of crystal structure of the induction melted sample upon annealing and spark plasma sintering (SPS) was tracked by room-temperature X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. An evidence for the formation of Mg2(Si,Ge,Sn) solid solution was obtained from the crystal lattice parameter of this phase which was found to be larger than that of undoped Mg2Si. XRD and SEM indicated that alongside with the main phase of the Mg2(Si,Ge,Sn) solid solution, an impurity phase of Mg2Sn exists in the sample. Amount of the Mg2Sn impurity phase is significantly reduced in spark plasma sintered sample.
AB - We report on preparation of Mg2(Si,Ge,Sn)-based thermoelectric materials by a direct induction melting method in Al2O3 crucible. A 40 g ingot of Mg2Si0.8Sn0.1Ge0.1 was prepared after addition to the batch 10 wt% of Mg excess. Evolution of crystal structure of the induction melted sample upon annealing and spark plasma sintering (SPS) was tracked by room-temperature X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. An evidence for the formation of Mg2(Si,Ge,Sn) solid solution was obtained from the crystal lattice parameter of this phase which was found to be larger than that of undoped Mg2Si. XRD and SEM indicated that alongside with the main phase of the Mg2(Si,Ge,Sn) solid solution, an impurity phase of Mg2Sn exists in the sample. Amount of the Mg2Sn impurity phase is significantly reduced in spark plasma sintered sample.
KW - Induction melting
KW - MgSi
KW - Microstructure
KW - Thermoelectric
UR - http://www.scopus.com/inward/record.url?scp=85032288500&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85032288500&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.266.207
DO - 10.4028/www.scientific.net/SSP.266.207
M3 - Conference contribution
AN - SCOPUS:85032288500
SN - 9783035711585
T3 - Solid State Phenomena
SP - 207
EP - 211
BT - Material and Manufacturing Technology VIII - 8th ICMMT
A2 - Korotcenkov, Ghenadii
A2 - Korotcenkov, Ghenadii
A2 - Masood, Syed H.
PB - Trans Tech Publications Ltd
T2 - 8th International Conference on Material and Manufacturing Technology, ICMMT 2017
Y2 - 4 May 2017 through 6 May 2017
ER -