Structural properties of Mg2(Si,Ge,Sn)-based thermoelectric materials prepared by induction melting method

Alexander Shubin, Dmitriy Karpenkov, Andrey Stepashkin, Dmitriy Arkhipov, Sergey Taskaev, Toshiyuki Takagi, Vladimir Khovaylo

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report on preparation of Mg2(Si,Ge,Sn)-based thermoelectric materials by a direct induction melting method in Al2O3 crucible. A 40 g ingot of Mg2Si0.8Sn0.1Ge0.1 was prepared after addition to the batch 10 wt% of Mg excess. Evolution of crystal structure of the induction melted sample upon annealing and spark plasma sintering (SPS) was tracked by room-temperature X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. An evidence for the formation of Mg2(Si,Ge,Sn) solid solution was obtained from the crystal lattice parameter of this phase which was found to be larger than that of undoped Mg2Si. XRD and SEM indicated that alongside with the main phase of the Mg2(Si,Ge,Sn) solid solution, an impurity phase of Mg2Sn exists in the sample. Amount of the Mg2Sn impurity phase is significantly reduced in spark plasma sintered sample.

Original languageEnglish
Title of host publicationMaterial and Manufacturing Technology VIII - 8th ICMMT
EditorsGhenadii Korotcenkov, Ghenadii Korotcenkov, Syed H. Masood
PublisherTrans Tech Publications Ltd
Number of pages5
ISBN (Print)9783035711585
Publication statusPublished - 2017
Event8th International Conference on Material and Manufacturing Technology, ICMMT 2017 - Singapore, Singapore
Duration: 2017 May 42017 May 6

Publication series

NameSolid State Phenomena
Volume266 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779


Other8th International Conference on Material and Manufacturing Technology, ICMMT 2017


  • Induction melting
  • MgSi
  • Microstructure
  • Thermoelectric

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics


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