Structural properties of directionally grown polycrystalline SiGe for solar cells

Kozo Fujiwara, Wugen Pan, Noritaka Usami, Kohei Sawada, Akiko Nomura, Toru Ujihara, Toetsu Shishido, Kazuo Nakajima

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We investigated structural properties of polycrystalline SiGe grown by directional growth method for solar cells. The average Ge composition was systematically changed in the range between 0 and 10 at%. Distributions of concentration and crystallographic orientation in the SiGe crystal were measured and the preferential growth orientation was found to change from (1 1 1) to (1 1 0) with increasing average Ge composition. Misfit dislocation was observed using transmission electron microscope. There was few dislocations in SiGe crystals when the average Ge composition was between 0 and 5 at% though a lot of dislocations existed at the average Ge composition of 10 at%. We concluded that the optimum Ge composition is around 5 at% for solar cells.

Original languageEnglish
Pages (from-to)467-473
Number of pages7
JournalJournal of Crystal Growth
Volume275
Issue number3-4
DOIs
Publication statusPublished - 2005 Mar 1

Keywords

  • A1. Misfit dislocation
  • A1. Preferential orientation
  • B1. Silicon-germanium
  • B3. Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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