Structural properties of directionally grown polycrystalline SiGe for solar cells

Kozo Fujiwara, Wugen Pan, Noritaka Usami, Kohei Sawada, Akiko Nomura, Toru Ujihara, Toetsu Shishido, Kazuo Nakajima

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14 Citations (Scopus)


We investigated structural properties of polycrystalline SiGe grown by directional growth method for solar cells. The average Ge composition was systematically changed in the range between 0 and 10 at%. Distributions of concentration and crystallographic orientation in the SiGe crystal were measured and the preferential growth orientation was found to change from (1 1 1) to (1 1 0) with increasing average Ge composition. Misfit dislocation was observed using transmission electron microscope. There was few dislocations in SiGe crystals when the average Ge composition was between 0 and 5 at% though a lot of dislocations existed at the average Ge composition of 10 at%. We concluded that the optimum Ge composition is around 5 at% for solar cells.

Original languageEnglish
Pages (from-to)467-473
Number of pages7
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 2005 Mar 1


  • A1. Misfit dislocation
  • A1. Preferential orientation
  • B1. Silicon-germanium
  • B3. Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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