Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

Leandro Voisin; Makoto Ohtsuka; Svitlana Petrovska; Ruslan Sergiienko; Takashi Nakamura

doi:10.1016/j.ijleo.2017.12.021

Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

Leandro Voisin, Makoto Ohtsuka, Svitlana Petrovska, Ruslan Sergiienko, Takashi Nakamura

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by direct current (DC) sputtering of ITO target in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The films were subsequently heat-treated in air at different temperatures in the range of 523–923 K for 60 min. The use of oxygen during deposition resulted in highly transparent (>80%) in visible and infrared ranges of spectra films. It has been found from the electrical measurements that as-deposited films under optimum sputtering conditions at working gas flow rate of Q(Ar)/Q(O₂) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 μΩcm. As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment temperature. It has been found that DC sputtered films with decreasing amount of indium oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).

Original language	English
Pages (from-to)	728-737
Number of pages	10
Journal	Optik
Volume	156
DOIs	https://doi.org/10.1016/j.ijleo.2017.12.021
Publication status	Published - 2018 Mar

Keywords

Direct current sputtering
Electrical properties
Indium tin oxide
Optical properties
Surface roughness

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.ijleo.2017.12.021

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title = "Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films",

abstract = "Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by direct current (DC) sputtering of ITO target in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The films were subsequently heat-treated in air at different temperatures in the range of 523–923 K for 60 min. The use of oxygen during deposition resulted in highly transparent (>80%) in visible and infrared ranges of spectra films. It has been found from the electrical measurements that as-deposited films under optimum sputtering conditions at working gas flow rate of Q(Ar)/Q(O2) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 μΩcm. As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment temperature. It has been found that DC sputtered films with decreasing amount of indium oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).",

keywords = "Direct current sputtering, Electrical properties, Indium tin oxide, Optical properties, Surface roughness",

author = "Leandro Voisin and Makoto Ohtsuka and Svitlana Petrovska and Ruslan Sergiienko and Takashi Nakamura",

note = "Funding Information: The present research was supported by New Energy and Industrial Technology Development Organization (NEDO), Japan . Publisher Copyright: {\textcopyright} 2017 Elsevier GmbH",

year = "2018",

month = mar,

doi = "10.1016/j.ijleo.2017.12.021",

language = "English",

volume = "156",

pages = "728--737",

journal = "Optik",

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T1 - Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

AU - Voisin, Leandro

AU - Ohtsuka, Makoto

AU - Petrovska, Svitlana

AU - Sergiienko, Ruslan

AU - Nakamura, Takashi

PY - 2018/3

Y1 - 2018/3

N2 - Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by direct current (DC) sputtering of ITO target in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The films were subsequently heat-treated in air at different temperatures in the range of 523–923 K for 60 min. The use of oxygen during deposition resulted in highly transparent (>80%) in visible and infrared ranges of spectra films. It has been found from the electrical measurements that as-deposited films under optimum sputtering conditions at working gas flow rate of Q(Ar)/Q(O2) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 μΩcm. As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment temperature. It has been found that DC sputtered films with decreasing amount of indium oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).

AB - Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by direct current (DC) sputtering of ITO target in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The films were subsequently heat-treated in air at different temperatures in the range of 523–923 K for 60 min. The use of oxygen during deposition resulted in highly transparent (>80%) in visible and infrared ranges of spectra films. It has been found from the electrical measurements that as-deposited films under optimum sputtering conditions at working gas flow rate of Q(Ar)/Q(O2) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 μΩcm. As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment temperature. It has been found that DC sputtered films with decreasing amount of indium oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).

KW - Direct current sputtering

KW - Electrical properties

KW - Indium tin oxide

KW - Optical properties

KW - Surface roughness

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SN - 0030-4026

VL - 156

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JO - Optik

JF - Optik

ER -

Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

Abstract

Keywords

ASJC Scopus subject areas

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