Structural, magnetic, and magnetotransport properties of FePt/MgO/CoPt perpendicularly magnetized tunnel junctions

N. Inami, G. Kim, T. Hiratsuka, H. Naganuma, M. Oogane, Y. Ando

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Perpendicularly magnetized magnetic tunnel junctions (MTJs) were fabricated by depositing thin L10-ordered FePt films on MgO(001) substrates using a UHV sputtering system, and the dependence of structural, magnetic, magnetotransport properties of the junctions on the thickness of the FePt layers was investigated. A full epitaxial structure was observed when the thickness of the L10-ordered FePt film was 4 nm. The tunnel magnetoresistance (TMR) ratio was measured to be 6% at room temperature, and magnetization switching was clearly observed in the thin FePt layer.

Original languageEnglish
Article number052008
JournalJournal of Physics: Conference Series
Volume200
Issue numberSECTION 5
DOIs
Publication statusPublished - 2010 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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