Structural, magnetic, and ferroelectric properties of multiferroic BiFe O3 film fabricated by chemical solution deposition

Hiroshi Naganuma, Soichiro Okamura

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71 Citations (Scopus)


Polycrystalline BiFe O3 film has been fabricated by a chemical solution deposition on PtTiSi O2 Si (100) substrates. A ferroelectric hysteresis loop showed a high remanent polarization of 47 μC cm2 at room temperature. Leakage current density was on the order of 10-1 A cm2 at 100 kVcm, indicating the high leakage current density in the present BiFe O3 film. The leakage current mechanism could be considered as follows: Ohmic conduction at low electric field and Poole-Frenkel trap-assisted conduction appeared as the electric field increased, and space-charge-limited current started at a high electric field. Weak ferromagnetism was observed at room temperature, and magnetic coercivity increased to 0.5 kOe with small remanent magnetization of 2 emu cm3 at 10 K. In order to investigate the magnetoelectric effect of the BiFe O3 film, the ferroelectric hysteresis loop was measured under the magnetic field of 5 kG at room temperature.

Original languageEnglish
Article number09M103
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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