Structural, magnetic and electric transport properties for Co2FeAl0.5Si0.5/n-GaaS junctions

Nobuki Tezuka; Tatsuya Saito; Masashi Matsuura; Satoshi Sugimoto

doi:10.4028/www.scientific.net/SSP.233-234.411

Structural, magnetic and electric transport properties for Co₂FeAl_0.5Si_0.5/n-GaaS junctions

Nobuki Tezuka, Tatsuya Saito, Masashi Matsuura, Satoshi Sugimoto

ENG - Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors have been investigated structural, magnetic and electrical transport properties for CFAS/n-GaAs junctions. From cross sectional TEM image, RHEED and XRD patternz of thin CFAS films, CFAS films found to be grown epitaxially on GaAs, and shown L2₁-ordered structure for the films with substrate temperature (T_CFAS) of 300°C and 400°C. It is hard to find some additional phase around the interface between CFAS and GaAs. Magnetic moment (and magnetic anisotropy energy) of CFAS increased (and decreased) with increasing T_CFAS up to 300°C and decreased (and increased) at T_CFAS of 400°C, respectively. The asymmetry of current(J)-voltage(V) curve for the junction with T_CFAS =300°C was found to be larger than those for other junctions. It was found there is the relation between T_CFAS dependence of spin signal obtained by three terminal Hanle or four terminal non-local measurement and that of magnetic moment, magnetic anisotropy field or asymmetry of J-V curve.

Original language	English
Title of host publication	Solid State Phenomena
Editors	Nikolai Perov, Anna Semisalova
Publisher	Trans Tech Publications Ltd
Pages	411-414
Number of pages	4
ISBN (Print)	9783038354826
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.233-234.411
Publication status	Published - 2015
Event	6th Moscow International Symposium on Magnetism, MISM 2014 - Moscow, Russian Federation Duration: 2014 Jun 29 → 2014 Jul 3

Publication series

Name	Solid State Phenomena
Volume	233-234
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Other

Other	6th Moscow International Symposium on Magnetism, MISM 2014
Country/Territory	Russian Federation
City	Moscow
Period	14/6/29 → 14/7/3

Keywords

GaAs
Heusler alloy
Spin injection

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/www.scientific.net/SSP.233-234.411

Cite this

Structural, magnetic and electric transport properties for Co₂FeAl_0.5Si_0.5/n-GaaS junctions. / Tezuka, Nobuki; Saito, Tatsuya; Matsuura, Masashi et al.

Solid State Phenomena. ed. / Nikolai Perov; Anna Semisalova. Trans Tech Publications Ltd, 2015. p. 411-414 (Solid State Phenomena; Vol. 233-234).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tezuka, N, Saito, T, Matsuura, M & Sugimoto, S 2015, Structural, magnetic and electric transport properties for Co₂FeAl_0.5Si_0.5/n-GaaS junctions. in N Perov & A Semisalova (eds), Solid State Phenomena. Solid State Phenomena, vol. 233-234, Trans Tech Publications Ltd, pp. 411-414, 6th Moscow International Symposium on Magnetism, MISM 2014, Moscow, Russian Federation, 14/6/29. https://doi.org/10.4028/www.scientific.net/SSP.233-234.411

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author = "Nobuki Tezuka and Tatsuya Saito and Masashi Matsuura and Satoshi Sugimoto",

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N2 - The authors have been investigated structural, magnetic and electrical transport properties for CFAS/n-GaAs junctions. From cross sectional TEM image, RHEED and XRD patternz of thin CFAS films, CFAS films found to be grown epitaxially on GaAs, and shown L21-ordered structure for the films with substrate temperature (TCFAS) of 300°C and 400°C. It is hard to find some additional phase around the interface between CFAS and GaAs. Magnetic moment (and magnetic anisotropy energy) of CFAS increased (and decreased) with increasing TCFAS up to 300°C and decreased (and increased) at TCFAS of 400°C, respectively. The asymmetry of current(J)-voltage(V) curve for the junction with TCFAS =300°C was found to be larger than those for other junctions. It was found there is the relation between TCFAS dependence of spin signal obtained by three terminal Hanle or four terminal non-local measurement and that of magnetic moment, magnetic anisotropy field or asymmetry of J-V curve.

AB - The authors have been investigated structural, magnetic and electrical transport properties for CFAS/n-GaAs junctions. From cross sectional TEM image, RHEED and XRD patternz of thin CFAS films, CFAS films found to be grown epitaxially on GaAs, and shown L21-ordered structure for the films with substrate temperature (TCFAS) of 300°C and 400°C. It is hard to find some additional phase around the interface between CFAS and GaAs. Magnetic moment (and magnetic anisotropy energy) of CFAS increased (and decreased) with increasing TCFAS up to 300°C and decreased (and increased) at TCFAS of 400°C, respectively. The asymmetry of current(J)-voltage(V) curve for the junction with TCFAS =300°C was found to be larger than those for other junctions. It was found there is the relation between TCFAS dependence of spin signal obtained by three terminal Hanle or four terminal non-local measurement and that of magnetic moment, magnetic anisotropy field or asymmetry of J-V curve.

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