TY - JOUR
T1 - Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy
AU - Kongjaeng, Pornsiri
AU - Sanorpim, Sakuntam
AU - Yamamoto, Takahisa
AU - Ono, Wataru
AU - Nakajima, Fumio
AU - Katayama, Ryuji
AU - Onabe, Kentaro
N1 - Funding Information:
The authors would like to acknowledge S. Kuboya and K. Itagaki for their helpful cooperation in the MOVPE growth. This work has been supported by Thailand–Japan Technology Transfer Project–Overseas Economic Cooperation Fund (TJTTP–OECF), Department of Physics, Faculty of Science and graduate school, Chulalongkorn University.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/1
Y1 - 2007/1
N2 - The use of the nearly lattice-matched InxGa1-xAs pseudo-substrate has been explored for the growth of InxGa1-xAs1-y Ny with higher In (x) contents by metalorganic vapor phase epitaxy (MOVPE). As compared with the quality of high In-containing In0.3Ga0.7As0.98N0.02 films grown directly on GaAs substrates, the growth on In0.2Ga0.8As pseudo-lattice-matched substrates yielded good structural quality films. The number of misfit dislocations investigated by cross-sectional transmission electron microscopy was found to be reduced in the InGaAsN grown layer. Furthermore, higher optical quality In0.3Ga0.7As0.98N0.02 films with the bandgap of 1.01 eV were grown on the In0.2Ga0.8As pseudo-lattice-matched substrate. This study shows that the use of the InxGa1-xAs pseudo-lattice-matched substrate is an effective method to fabricate a thick lattice-matched InGaAsN layers with higher optical and structural qualities necessary for the development of the multijunction (MJ) solar cells.
AB - The use of the nearly lattice-matched InxGa1-xAs pseudo-substrate has been explored for the growth of InxGa1-xAs1-y Ny with higher In (x) contents by metalorganic vapor phase epitaxy (MOVPE). As compared with the quality of high In-containing In0.3Ga0.7As0.98N0.02 films grown directly on GaAs substrates, the growth on In0.2Ga0.8As pseudo-lattice-matched substrates yielded good structural quality films. The number of misfit dislocations investigated by cross-sectional transmission electron microscopy was found to be reduced in the InGaAsN grown layer. Furthermore, higher optical quality In0.3Ga0.7As0.98N0.02 films with the bandgap of 1.01 eV were grown on the In0.2Ga0.8As pseudo-lattice-matched substrate. This study shows that the use of the InxGa1-xAs pseudo-lattice-matched substrate is an effective method to fabricate a thick lattice-matched InGaAsN layers with higher optical and structural qualities necessary for the development of the multijunction (MJ) solar cells.
KW - A1. Transmission electron microscopy
KW - A3. Metalorganic vapor-phase epitaxy
KW - B2. InGaAs pseudo-lattice-matched substrate
KW - B2. InGaAsN
KW - B3. Multijunction (MJ) solar cells
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U2 - 10.1016/j.jcrysgro.2006.10.010
DO - 10.1016/j.jcrysgro.2006.10.010
M3 - Article
AN - SCOPUS:33846535204
VL - 298
SP - 111
EP - 115
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -