Structural investigation of Ge3Sb2Te6, an intermetallic compound in the GeTe-Sb2Te3 homologous series

Toshiyuki Matsunaga, Rie Kojima, Noboru Yamada, Kouichi Kifune, Yoshiki Kubota, Masaki Takata

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38 Citations (Scopus)

Abstract

Ge3Sb2Te6 was analyzed in detail using an x-ray diffraction method. The crystal of this material in the space group R3̄m is characterized as a 33-layered cubic close-packed stacking structure. Te atoms fully occupy their specific layers, whereas Ge and Sb atoms are located in other layers thus causing partial atomic disordering. Te and Ge/Sb layers are laminated alternately 11 times to form a NaCl block. Electron density distributions in the crystal were obtained using the maximum entropy method and band calculation, which showed very good agreement with each other. Ge3Sb2Te6 is a compound semiconductor with a very narrow band gap.

Original languageEnglish
Article number161919
JournalApplied Physics Letters
Volume90
Issue number16
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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