Structural investigation of cubic-phase InN on GaAs (001) grown by MBE under In- And N-rich growth conditions

S. Kuntharin, S. Sanorpim, T. Nakamura, Ryuji Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassisted molecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) and Raman scattering measurements were performed to examine the hexagonal phase generation in the c-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phase purity (∼82%) were achieved under the In-rich growth condition. On the other hand, for the N-rich growth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which is generated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Our results demonstrate that the In-rich growth condition plays a critical role in the growth of high quality c-InN films with higher cubic phase purity.

Original languageEnglish
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages215-217
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
Publication statusPublished - 2008 Jan 1
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: 2007 Jul 12007 Jul 6

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Other

OtherInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/7/107/7/6

Keywords

  • High resolution x-ray diffraction
  • In-rich growth condition
  • Raman scattering
  • c-InN

ASJC Scopus subject areas

  • Engineering(all)

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