Structural imperfections in ultrathin oxides grown on hydrogen terminated silicon surfaces

Takeo Hattori, Kazuaki Ohishi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    The initial stage of oxidation of 40wt-% NH4F treated Si(111) surface at 300 °C in dry oxygen with a pressure of 133 Pa and the subsequent oxidation at 600 and 800°C were studied. It was found from the analysis of Si 2p photoelectron spectra that non-uniform layer by layer oxidation proceeds at 300°C, while the layer by layer oxidation proceeds at 600 and 800°C. Furthermore, at these temperatures the interface becomes atomically flat with the progress of oxidation.

    Original languageEnglish
    Title of host publicationInterface Control of Electrical, Chemical, and Mechanical Properties
    EditorsPeter Borgesen, Klavs F. Jensen, Roger A. Pollak
    PublisherPubl by Materials Research Society
    Pages61-67
    Number of pages7
    Volume318
    ISBN (Print)1558992170
    Publication statusPublished - 1994 Jan 1
    EventProceedings of the Fall 1993 MRS Meeting - Boston, MA, USA
    Duration: 1993 Nov 291993 Dec 3

    Other

    OtherProceedings of the Fall 1993 MRS Meeting
    CityBoston, MA, USA
    Period93/11/2993/12/3

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

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