Structural effects of channel cross-section on the gate capacitance of Silicon nanowire field-effect transistors

S. Sato, K. Kakushima, P. Ahmet, K. Ohmori, K. Natori, K. Yamada, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the gate capacitance of the silicon nanowire (SiNW) field-effect transistor (FET) using T-CAD software. The smaller equivalent oxide thickness of the SiNW FETs was obtained compared with the planar FET that had the same oxide thickness down to sub-1 nm. Gate capacitance of the SiNW FET substantially increased with thinner physical oxide thickness compared with planar FET. SiNW structure with thinner gate oxide thickness is effective for improvement of off-characteristics.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages87-92
Number of pages6
Edition1
DOIs
Publication statusPublished - 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: 2011 Mar 132011 Mar 14

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
CountryChina
CityShanghai
Period11/3/1311/3/14

ASJC Scopus subject areas

  • Engineering(all)

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