@inproceedings{e367febfe9a140eeb1cfb47bc900a216,
title = "Structural effects of channel cross-section on the gate capacitance of Silicon nanowire field-effect transistors",
abstract = "We investigated the gate capacitance of the silicon nanowire (SiNW) field-effect transistor (FET) using T-CAD software. The smaller equivalent oxide thickness of the SiNW FETs was obtained compared with the planar FET that had the same oxide thickness down to sub-1 nm. Gate capacitance of the SiNW FET substantially increased with thinner physical oxide thickness compared with planar FET. SiNW structure with thinner gate oxide thickness is effective for improvement of off-characteristics.",
author = "S. Sato and K. Kakushima and P. Ahmet and K. Ohmori and K. Natori and K. Yamada and H. Iwai",
year = "2011",
doi = "10.1149/1.3567564",
language = "English",
isbn = "9781607682356",
series = "ECS Transactions",
number = "1",
pages = "87--92",
booktitle = "China Semiconductor Technology International Conference 2011, CSTIC 2011",
edition = "1",
note = "10th China Semiconductor Technology International Conference 2011, CSTIC 2011 ; Conference date: 13-03-2011 Through 14-03-2011",
}