Structural defect-related photoluminescence in GaN

L. Chen; B. J. Skromme; M. K. Mikhov; H. Yamane; M. Aoki; F. J. DiSalvo; B. Wagner; R. F. Davis; P. A. Grudowski; R. D. Dupuis

Structural defect-related photoluminescence in GaN

L. Chen, B. J. Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, R. D. Dupuis

Center for Exploration of New Inorganic Materials

Research output: Contribution to journal › Conference article › peer-review

Abstract

Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Original language	English
Pages (from-to)	637-642
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	798
Publication status	Published - 2003 Dec 1
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{5ec1d64e6d1a4e71af02c54271c8dbf6,

title = "Structural defect-related photoluminescence in GaN",

abstract = "Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.",

author = "L. Chen and Skromme, {B. J.} and Mikhov, {M. K.} and H. Yamane and M. Aoki and DiSalvo, {F. J.} and B. Wagner and Davis, {R. F.} and Grudowski, {P. A.} and Dupuis, {R. D.}",

year = "2003",

month = dec,

day = "1",

language = "English",

volume = "798",

pages = "637--642",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - JOUR

T1 - Structural defect-related photoluminescence in GaN

AU - Chen, L.

AU - Skromme, B. J.

AU - Mikhov, M. K.

AU - Yamane, H.

AU - Aoki, M.

AU - DiSalvo, F. J.

AU - Wagner, B.

AU - Davis, R. F.

AU - Grudowski, P. A.

AU - Dupuis, R. D.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

AB - Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

UR - http://www.scopus.com/inward/record.url?scp=2942668172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942668172&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:2942668172

VL - 798

SP - 637

EP - 642

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -