Structural characterization of MgO/c-Al2O3 interfaces

T. Minegishi, Takashi Hanada, H. Suzuki, Z. Vashaei, D. C. Oh, K. Sumitani, O. Sakata, M. W. Cho, T. Yao

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by inter-diffusion during MgO layer growth. The formation of spinel MgAl 2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (Tc) for the formation of MgAl 2O4 was found to be around 700 °C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface.

Original languageEnglish
Pages (from-to)1715-1718
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number5
DOIs
Publication statusPublished - 2007 Dec 1
Event33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
Duration: 2006 Aug 132006 Aug 17

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Structural characterization of MgO/c-Al<sub>2</sub>O<sub>3</sub> interfaces'. Together they form a unique fingerprint.

Cite this