Structural characterization of epitaxial ZnO films grown on (0 0 0 1) Al2O3 by electron cyclotron resonance-assisted molecular beam epitaxy

S. H. Lim, Daisuke Shindo, H. B. Kang, K. Nakamura

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Detailed structure of epitaxial ZnO films grown on (0 0 0 1) sapphire has been investigated extensively using transmission electron microscopy. Through the cross-sectional observations, in addition to the basic crystallographic epitaxial relationship of (0 0 0 1)ZnO∥(0 0 0 1)sapphire and [2 1̄ 1̄ 0]ZnO∥[1 1̄ 0 0]sapphire, the line directions of most threading dislocations in the ZnO films were found to be normal to the interface. On the other hand, from the plan-view high-resolution observations, the sub-grains being accompanied by the threading dislocations with Burgers vectors b of 1/3〈1 1 2̄ 0〉 were clearly observed. It was found that the size of the sub-grains ranges from 15 to 150 nm and the crystals of the sub-grains are rotated by 1°-5° with respect to the matrix ZnO films. The overlapping of the ZnO films and the sapphire substrate in the sub-grains was discussed taking into account the Moiré fringes of HREM image.

Original languageEnglish
Pages (from-to)208-213
Number of pages6
JournalJournal of Crystal Growth
Volume225
Issue number2-4
DOIs
Publication statusPublished - 2001 May 1

Keywords

  • A1. Defects
  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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